Precise arsenic doping of HgCdTe by MBE and effects on compositional interdiffusion

Journal of Electronic Materials

Volumn 35, Issue 6, 2006, Pages 1346-1349

  Piquette, E C ^a   Edwall, D D ^a   Lee, D L ^a   Arias, J M ^a  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

Arsenic; Doping; HgCdTe; Interdiffusion; Molecular beam epitaxy

Indexed keywords

CDZNTE SUBSTRATES; HGCDTE; INTERDIFFUSION;

ARSENIC; MERCURY (METAL); MOLECULAR BEAM EPITAXY; MULTILAYERS; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

SEMICONDUCTING TELLURIUM;

EID: 33746191911     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0266-y     Document Type: Conference Paper

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