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Journal of Crystal Growth

Volumn 184-185, Issue , 1998, Pages 459-464

Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation

(6) Svob, L a Cheze I a Lusson, A a Ballutaud, D a Rommeluere J F a Marfaing, Y a

a CNRS (France)

Author keywords

Cadmium telluride; Epitaxy; Hydrogenation; MOVPE; Substrate orientation

Indexed keywords

EID: 11544348802 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/s0022-0248(98)80096-1 Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.