Investigation of parameters to obtain reduced Shockley-Read traps and near radiatively limited lifetimes in MOVPE-grown MCT

Journal of Materials Science: Materials in Electronics

Volumn 11, Issue 7, 2000, Pages 565-568

  Maxey, C D ^a   Ahmed, M U ^a   Capper, P ^a   Jones, C L ^a   Gordon, N T ^b   White, M ^c  

^a BAE SYSTEMS   (United Kingdom)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^c White Numeric Consulting Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; LASER PULSES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

PHOTOCONDUCTIVE DECAY; SHOCKLEY READ TRAPS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0034291286     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1026595818457     Document Type: Article

References (5)

1. T. ASHLEY and C. T. ELLIOTT, Electron. Lett. 21 (1985) 451.
2. C. D. MAXEY, C. L. JONES, N. E. METCALFE, R. A. CATCHPOLE, N. T. GORDON, T. ASHLEY, A. M. WHITE and C. T. ELLIOT, Proc. SPIE 3122 (1997) 453.
3. D. E. LACKLISON and P. CAPPER, Semicond. Sci. Technol. 2 (1987) 33.
4. R. FASTOW, D. GOREN and NEMIROVSKY, J. Appl. Phys. 68 (1990) 3405.
5. N. T. GORDON, R. S. HALL, A. M. WHITE, C. L. JONES, C. D. MAXEY, N. E. METCALFE, R. A. CATCHPOLE, J. Electron. Mater. (2000), in press.