A boosting pass gate with improved switching characteristics and no overdriving for programmable routing switch based on crystalline In-Ga-Zn-O technology

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 23, Issue 3, 2015, Pages 422-434

  Okamoto, Yuki ^a   Nakagawa, Takashi ^a   Aoki, Takeshi ^a   Ikeda, Masataka ^a   Kozuma, Munehiro ^a   Osada, Takeshi ^a   Kurokawa, Yoshiyuki ^a   Ikeda, Takayuki ^a   Yamade, Naoto ^a   Okazaki, Yutaka ^a   Miyairi, Hidekazu ^a   Fujita, Masahiro ^b   Koyama, Jun ^a   Yamazaki, Shunpei ^a  

^a SEMICONDUCTOR ENERGY LABORATORY CO LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Boosting effect; field programmable gate array (FPGA); In Ga Zn O (IGZO); oxide semiconductor; programmable logic device; programmable switch; reconfigurable system.

Indexed keywords

C (PROGRAMMING LANGUAGE); CRYSTALLINE MATERIALS; FIELD EFFECT TRANSISTORS; LOGIC DEVICES; LOGIC GATES; RANDOM ACCESS STORAGE; RECONFIGURABLE HARDWARE; STATIC RANDOM ACCESS STORAGE; TRANSISTORS; ZINC;

BOOSTING EFFECTS; IN-GA-ZN-O (IGZO); OXIDE SEMICONDUCTOR; PROGRAMMABLE LOGIC DEVICE; PROGRAMMABLE SWITCHES; RECONFIGURABLE SYSTEMS;

FIELD PROGRAMMABLE GATE ARRAYS (FPGA);

EID: 85027954911     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/TVLSI.2014.2316871     Document Type: Article

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