New threshold voltage compensation pixel circuits in 13.5-inch quad full high definition oled display of crystalline in-ga-zn-oxide fets

Digest of Technical Papers - SID International Symposium

Volumn 43, Issue 1, 2012, Pages 88-91

  Tanabe, Toru ^a   Amano, Seiko ^a   Miyake, Hiroyuki ^a   Suzuki, Akio ^a   Komatsu, Ryu ^a   Koyama, Jun ^a   Yamazaki, Shunpei ^a   Okazaki, Kenichi ^b   Katayama, Masahiro ^b   Matsukizono, Hiroshi ^a   Kanzaki, Yohsuke ^a   Matsuo, Takuya ^a  

^a SEMICONDUCTOR ENERGY LABORATORY CO LTD   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

Normally on transistor; OLED; Oxide semiconductor; Threshold voltage compensation pixel circuit; Top emission structure

Indexed keywords

COMPUTER CIRCUITS; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE SEMICONDUCTORS; PIXELS; TIMING CIRCUITS; TRANSISTORS;

COLOR FILTERS; HIGH DEFINITION; IN GA ZN OXIDES; NORMALLY ON; OLED; OLED DISPLAYS; THRESHOLD VOLTAGE COMPENSATION PIXEL CIRCUITS; TOP EMISSION;

THRESHOLD VOLTAGE;

EID: 84877283890     PISSN: 0097966X     EISSN: 21680159     Source Type: Conference Proceeding    
DOI: 10.1002/j.2168-0159.2012.tb05717.x     Document Type: Conference Paper

References (16)

1. 3-BO Systems [A:Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at Temperatures over 1000°C,” J. Solid State Chem. 60, 382-384 (1985)
2. 4-ZnO System,” ibid. 116, 170-178 (1995).
3. M. Nakamura, NIRIM Newsletter 150, 1-4 (1995).
4. 4-ZnO System at 1350°C,” J. Solid State Chem. 93, 298-315 (1991).
5. m(M=In, Ga;m=Integer) Described by Four-Dimensional Superspace Group,” J. Solid State Chem. 139, 347-355 (1998).
6. H. Miyake, H. Shishido, M. Sasaki, et al., “Low Power 3.4-inch Quarter High Definition OLED Display Using In-Ga-Zn-Oxide TFTs and White Tandem OLED,” SID Symposium Digest, 41 253-256 (2010).
7. H. Godo, A. Miyanaga, K. Kusunoki, et al., “Modeling and Measurement of Ultra-low Leakage Current of IGZO TFTs and New Driving Method of LCDs,” IDW’10 Digest, 235-238 (2010).
8. K. Hatano, A. Chida, T. Okano, et al., “3.4-inch Full-Color QHD AMOLED Display Using a Large-Size Flexible Substrate with Highly Reliable OS-FETs,” SID Symposium Digest, 42 498-500 (2011).
9. N. Sugisawa, T. Sasaki, T. Ushikubo, et al., “High-Definition Top-Emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors,” SID Symposium Digest, 42 369-372 (2011).
10. Y. Hirakata, D. Kubota, A. Yamashita, et al., “A 6-inch Field-Sequential Blue Phase Mode LCD with Integrated Driver using Highly Reliable Oxide Semiconductor,” SID Symposium Digest, 42 32-35 (2011).
11. H. Shishido, S. Amano, K. Toyotaka, et al., “Color Sequential LC Display Using High Reliable Oxide Semiconductors with Monochrome Electronics,” SID Symposium Digest, 42 369-372 (2011).
12. M. Takahashi, M. Nakashima, T. Honda, et al., “C-Axis Aligned Crystalline In-Ga-Zn-Oxide FET with High Reliability,” Proc. AM-FPD’11 Digest, 271-274 (2011).
13. S. Yamazaki, “To promote the spirit of inventing,” Presented at the ICSU Int. Workshop Private Sector - Academia Interactions, Stockholm, Sweden, Nov. 2011.
14. S. M. Lee, D. W. Kim, I. K. Kang, et al., “Control of Threshold Voltage in Back Channel Etch Type Amorphous Indium Gallium Zinc Oxide Thin Film Transistors,” SID Symposium Digest, 42 104-106 (2011).
15. Y. S. Park, B. Y. Chung, C. K. Kang, et al., “Oxide TFT Scan Driver with Dynamic Threshold Voltage Control,” SID Symposium Digest, 42 718-721 (2011).
16. H. Nowatari, T. Ushikubo, N. Ohsawa, et al., “Intermediate Connector with Suppressed Voltage Loss for White Tandem OLEDs,” SID Symposium Digest, 40 899-902 (2009).