Counterdoping with patterned ion implantation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2013, Pages 1280-1284

  Romer, Udo ^a   Peibst, Robby ^a   Ohrdes, Tobias ^a   Larionova, Yevgeniya ^a   Harder, Nils Peter ^a,e   Brendel, Rolf ^a,b   Grohe, Andreas ^c   Stichtenoth, Daniel ^c   Wutherich, Tobias ^c   Schollhorn, Claus ^c   Krokoszinski, Hans Joachim ^c   Graff, John ^d  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c Bosch Solar Energy AG   (Germany)

^d Applied Materials Inc   (United States)

^e VECO USA Inc   (United States)

Author keywords

Ion implantation; Photovoltaic cell; Silicon; Solar energy

Indexed keywords

PHOTOVOLTAIC CELLS; SILICON; SILICON WAFERS; SOLAR ENERGY;

BACK SURFACE FIELDS; BAND-TO-BAND-TUNNELING; HIGH-TEMPERATURE ANNEALING; IMPLANT DAMAGE; MODULE RELIABILITY; PRECISE ALIGNMENTS; SPACE CHARGE REGIONS; TRAP ASSISTED TUNNELING;

ION IMPLANTATION;

EID: 84896445025     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2013.6744375     Document Type: Conference Paper

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