Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation

Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

  Steingrube, Silke ^a   Breitenstein, Otwin ^b   Ramspeck, Klaus ^c,f   Glunz, Stefan ^d   Schenk, Andreas ^e   Altermatt, Pietro P ^e  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^d FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^e ETH ZURICH   (Switzerland)

^f SCHOTT Solar AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

C-SI SOLAR CELL; COUPLED DEFECTS; CRYSTALLINE SILICON SOLAR CELLS; DEEP LEVEL; DENSITY OF DEFECTS; I - V CURVE; IDEALITY FACTORS; INVERSION LAYER; IV CHARACTERISTICS; LASER SCRIBING; LOW-TO-HIGH; MODEL DESCRIPTION; NON-LINEAR; P-N JUNCTION; SHOCKLEY-READ-HALL; SHUNT CURRENT;

DEFECT DENSITY; DEFECTS; SEMICONDUCTOR JUNCTIONS; SILICON SOLAR CELLS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79960523265     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3607310     Document Type: Article

References (42)

1. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952). 10.1103/PhysRev.87.835
2. R. N. Hall, Phys. Rev. 87, 387 (1952). 10.1103/PhysRev.87.387
3. W. Shockley, Bell Sys. Tech. J. 28, 435 (1949).
4. C.-T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957). 10.1109/JRPROC.1957.278528
5. S. C. Choo, Solid State Electron. 11, 1069 (1986). 10.1016/0038-1101(68) 90129-9
6. A. Nussbaum, Phys. Status Solidi A 19, 441 (1973). 10.1002/pssa. 2210190207
7. P. J. Anderson and M. J. Buckingham, Electron. Lett. 13, 496 (1977). 10.1049/el:19770364
8. K. Lee and A. Nussbaum, Solid State Electron. 23, 655 (1980). 10.1016/0038-1101(80)90051-9
9. R. Corkish and M. A. Green, J. Appl. Phys. 80, 3083 (1996). 10.1063/1.363168
10. J. Pallars, L. F. Marsal, X. Correig, J. Calderer, and R. Alcubilla, Solid State Electron. 41, 17 (1997). 10.1016/S0038-1101(96)00140-2
11. K. R. McIntosh, P. P. Altermatt, and G. Heiser, in Proc. 16th EU PVSEC (James and James, Glasgow, UK, 2000), pp. 243-246.
12. H. J. Queisser, Solid State Electron. 1, 1 (1962). 10.1016/0038-1101(62) 90012-6
13. A. Kaminski, J. J. Marchand, H. E. Omari, A. Laugier, Q. N. Le, and D. Sarti, in Proc. 25th IEEE PVSC (Washington, D. C., 1996) pp. 573-576.
14. A. Schenk and U. Krumbein, J. Appl. Phys. 78, 3185 (1995). 10.1063/1.360007
15. J. Beier and B. Voss, in Proc. 23th IEEE PVSC (Louisville, KY, 1993), pp. 321-324.
16. K. R. McIntosh, Lumps, humps and bumps: Three detrimental effects in the current-voltage curve of silicon solar cells., Ph.D. thesis, (UNSW, School of Electrical Engineering, Sydney, 2001).
17. K. R. McIntosh and C. B. Honsberg, in Proc. 16th EU PVSEC (James and James, London, UK, 2000), pp. 1651-1654.
18. A. S. H. van der Heide, A. Schnecker, J. H. Bultman, and W. C. Sinke, Prog. Photovolt. Res. Appl. 13, 3 (2005). 10.1002/pip.v13:1
19. R. Khn, P. Fath, and E. Bucher, in Proc. 28th IEEE PVSC (Anchorage, AL, 2000) pp. 116-119.
20. O. Breitenstein, M. Langenkamp, O. Lang, and A. Schirrmacher, Sol. Energy Mater. Sol. Cells 65, 55 (2001). 10.1016/S0927-0248(00)00077-5
21. O. Breitenstein, M. Langenkamp, J. P. Rakoniaina, and J. Zettner, in Proc. 17th EU PVSEC (Munich, Germany, 2001), pp. 1499-1502.
22. A. Hauser, G. Hahn, M. Spiegel, H. Feist, O. Breitenstein, and P. Rakotoniaina, in Proc. 17th EU PVSEC (Munich, Germany, 2001), p. 1739.
23. O. Breitenstein and M. Langenkamp, Lock-in Thermography-Basics and Use for Functional Diagnostics of Electronic Components (Springer, Berlin, 2003).
24. J. J. Hopfield, D. G. Thomas, and M. Gershenzon, Phys. Rev. Lett. 10, 162 (1963). 10.1103/PhysRevLett.10.162
25. D. G. Thomas, J. J. Hopfield, and W. M. Augistyniak, Phys. Rev. 140, A202 (1965). 10.1103/PhysRev.140.A202
26. S. J. Robinson, S. R. Wenham, P. P. Altermatt, A. G. Aberle, G. Heiser, and M. A. Green, J. Appl. Phys. 78, 4740 (1995). 10.1063/1.359821
27. M. Y. Ghannam and R. P. Mertens, IEEE Electron. Device L. 10, 4740 (1989). 10.1109/55.31734
28. P. P. Altermatt, A. G. Aberle, J. Zhao, A. Wang, and G. Heiser, Sol. Energy Mater. Sol. Cells 74, 165 (2002). 10.1016/S0927-0248(02)00061-2
29. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Clarendon, Oxford, UK, 1988), pp. 39 and 99.
30. A. G. Aberle, P. P. Altermatt, G. Heiser, S. J. Robinson, A. Wang, J. Zhao, U. Krumbein, and M. A. Green, J. Appl. Phys. 77, 3491 (1995). 10.1063/1.358643
31. O. Breitenstein, P. P. Altermatt, K. Ramspeck, and A. Schenk, in Proc. 21st EU PVSEC (Dresden, Germany, 2006), pp. 625-628.
32. D. Macdonald and L. J. Geerligs, Appl. Phys. Lett. 85, 4061 (2004). 10.1063/1.1812833
33. M. Lax, J. Phys. Chem. Solids 8, 66 (1959). 10.1016/0022-3697(59)90275-6
34. S. Gasiorowicz, Quantum Physics (John Wiley and Sons, New York, 1974), p. 319.
35. Sentaurus-Device, available at www.synopsys.com/products/tcad/tcad.html Synopsys Inc., Mountain View, CA.
36. P. P. Altermatt, G. Heiser, A. G. Aberle, A. Wang, J. Zhao, S. J. Robinson, S. Bowden, and M. A. Green, Prog. Photovoltaics 4, 399 (1996). 10.1002/(SICI)1099-159X(199611/12)4:6><1.0.CO;2-1
37. P. P. Altermatt, A. Schenk, and F. Geelhaar, J. Appl. Phys. 93, 1598 (2003). 10.1063/1.1529297
38. A. Schenk, Solid State Electron. 35, 1558 (1992). 10.1016/0038-1101(92) 90184-E
39. O. Breitenstein, J. Bauer, A. Lotnyk, and J.-M. Wagner, Superlattices Microstruct. 45, 182 (2009). 10.1016/j.spmi.2008.10.025
40. H. Ibach and H. Lth, Festkrperphysik, 6th ed. (Springer, Berlin, 2002), p. 411.
41. N. Mott, Metal-Insulator Transitions (Taylor and Francis, London, 1990).
42. S. Steingrube, P. P. Altermatt, D. S. Steingrube, J. Schmidt, and R. Brendel, J. Appl. Phys. 108, 014506 (2010). 10.1063/1.3437643