Amorphous/Crystalline Silicon Interface Passivation: Ambient-Temperature Dependence and Implications for Solar Cell Performance

IEEE Journal of Photovoltaics

Volumn 5, Issue 3, 2015, Pages 718-724

  Seif, Johannes P ^a   Krishnamani, Gopal ^a   Demaurex, Bénédicte ^a   Ballif, Christophe ^a   De Wolf, Stefaan ^a  

^a EPFL   (Switzerland)

Author keywords

Passivation; silicon heterojunction (SHJ); solar cells; temperature coefficient

Indexed keywords

AMORPHOUS FILMS; HETEROJUNCTIONS; OPEN CIRCUIT VOLTAGE; PASSIVATION; SILICON; SILICON SOLAR CELLS; SOLAR CELLS; TEMPERATURE; TEMPERATURE DISTRIBUTION;

DEVICE ARCHITECTURES; HIGH TEMPERATURE PERFORMANCE; OPERATING TEMPERATURE; SILICON HETEROJUNCTIONS; SOLAR CELL PERFORMANCE; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

AMORPHOUS SILICON;

EID: 85027934009     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2015.2397602     Document Type: Article

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