Overview and latest developments in photoconductance lifetime measurements in silicon

Solid State Phenomena

Volumn 205-206, Issue , 2014, Pages 103-109

  Sinton, R A ^a   Blum, A L ^a   Swirhun, J S ^a  

^a NONE   (United States)

Author keywords

Lifetime; Mobility; QSSPC

Indexed keywords

CARRIER MOBILITY; DEFECTS; GRAIN BOUNDARIES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

EDDY-CURRENT SENSORS; INDUSTRIAL SAMPLES; LATEST DEVELOPMENT; LIFETIME; LIFETIME MEASUREMENTS; MEASUREMENT TECHNIQUES; PHOTOCONDUCTANCE LIFETIME MEASUREMENTS; QSSPC; EDDY CURRENT SENSORS;

EDDY CURRENT TESTING;

EID: 84886768484     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.205-206.103     Document Type: Conference Paper

References (11)

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8. R. A. Sinton, J. Swirhun, M. K. Forsyth, and T. Mankad, The effects of sub-bandgap light on QSSPC measurement of lifetime and trap density: What is the cause of trapping?, Proc. of the 25th European Photovoltaic Solar Energy Conference, Valencia, Spain, (2010) 1073-1077.
9. T. Mankad, R. A. Sinton, J. S. Swirhun, A. L. Blum, Inline bulk-lifetime prediction on as-cut multicrystalline wafers, to be published in Energy Procedia (2013).
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11. Z. Hameiri, T. Trupke, R. A. Sinton, Determination of the mobility sum in silicon wafers by combined photoluminescence and photoconductance measurements, Proc. European Photovoltaic Solar Energy Conference (2012) 1477-1481.