Is light-induced degradation of a-Si:H/oSi interfaces reversible?

Applied Physics Letters

Volumn 104, Issue 25, 2014, Pages

  Mhamdi, El Mahdi El ^a   Holovsky, Jakub ^a,b   Demaurex, Benedicte ^a   Ballif, Christophe ^a   De Wolf, Stefaan ^a  

^a EPFL   (Switzerland)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); LIGHT; SILICON; TEMPERATURE;

BULK ELECTRONIC PROPERTIES; CRYSTALLINE SILICONS; HYDROGEN EVOLUTION; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; LIGHT INDUCED DEFECTS; LIGHT-INDUCED DEGRADATION; LONG TERM STABILITY; LOW TEMPERATURE ANNEALING;

AMORPHOUS SILICON;

EID: 84922339595     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/l.488550l     Document Type: Article

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