Temperature dependence of Auger recombination in highly injected crystalline silicon

Journal of Applied Physics

Volumn 112, Issue 11, 2012, Pages

  Wang, Sisi ^a   MacDonald, Daniel ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; AUGER RECOMBINATION; CRYSTALLINE SILICONS; HIGH INJECTION; INJECTION LEVELS; PHOTOCONDUCTANCE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; TEMPERATURE RANGE;

CRYSTALLINE MATERIALS; SILICON;

AUGERS;

EID: 84871184228     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768900     Document Type: Article

References (23)

1. J. Dziewior and W. Schmid, Appl. Phys. Lett. 31, 346 (1977). 10.1063/1.89694
2. L. Huldt, N. G. Nilsson, and K. G. Svantesson, Appl. Phys. Lett. 35, 776 (1979). 10.1063/1.90974
3. R. A. Sinton and R. M. Swanson, IEEE Trans. Electron Devices ED-34, 1380 (1987). 10.1109/T-ED.1987.23095
4. S. K. Pang and A. Rohatgi, Applied Physics Lett. 59, 195 (1991). 10.1063/1.106407
5. P. P. Altermatt, J. Schmidt, G. Heiser, and A. G. Aberle, J. Appl. Phys. 82, 4938 (1997). 10.1063/1.366360
6. P. Jonsson, H. Bleichner, M. Isberg, and E. Nordlander, J. Appl. Phys. 81, 2256 (1997). 10.1063/1.364277
7. S. W. Glunz, D. Biro, S. Rein, and W. Warta, J. Appl. Phys. 86, 683 (1999). 10.1063/1.370784
8. J. Schmidt, M. J. Kerr, and P. P. Altermatt, J. Appl. Phys. 88, 1494 (2000). 10.1063/1.373878
9. M. J. Kerr and A. Cuevas, J. Appl. Phys. 91, 2473 (2002). 10.1063/1.1432476
10. M. J. Kerr and A. Cuevas, Semicond. Sci. Technol. 17, 166 (2002). 10.1088/0268-1242/17/2/314
11. R. A. Sinton and A. Cuevas, Appl. Phys. Lett. 69, 2510 (1996). 10.1063/1.117723
12. B. B. Paudyal, K. R. McIntosh, D. H. Macdonald, B. S. Richards, and R. A. Sinton, Prog. Photovoltaics 16, 609 (2008). 10.1002/pip.839
13. J. Schmidt, Appl. Phys. Lett. 82, 2178 (2003). 10.1063/1.1563830
14. D. B. M. Klaassen, Solid-State Electron. 35, 953 (1992). 10.1016/0038-1101(92)90325-7
15. D. B. M. Klaassen, Solid-State Electron. 35, 961 (1992). 10.1016/0038-1101(92)90326-8
16. S. Reggiani, M. Valdinoci, L. Colalongo, M. Rudan, G. Baccarani, A. D. Stricker, F. Illien, N. Felber, W. Fichtner, and L. Zullino, IEEE Trans. Electron Devices 49, 490 (2002). 10.1109/16.987121
17. B. B. Paudyal, K. R. McIntosh, and D. H. Macdonald, J. Appl. Phys. 105, 124510 (2009). 10.1063/1.3139286
18. K. R. McIntosh and R. A. Sinton, in Proceedings 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain (WIP-Renewable Energies, 2008), p. 77.
19. E. Yablonovitch and T. Gmitter, Appl. Phys. Lett. 49, 587 (1986). 10.1063/1.97049
20. M. Rosling, H. Bleichner, P. Jonsson, and E. Nordlander, J. Appl. Phys. 76, 2855 (1994). 10.1063/1.358504
21. A. Cuevas and R. Sinton, in 22nd European Photovoltaics Solar Energy Conference, Milan, Italy (WIP-Renewable Energies, 2007), p. 38.
22. A. Cuevas and R. A. Sinton, in Proceedings 23rd European Photovoltaic Solar Energy Conference, Valencia, Spain (WIP-Renewable Energies, 2008), p. 315.
23. I. V. Grekhov and L. A. Delimova, Sov. Phys. Semicond. 14, 529 (1980).