Behavior and role of superficial oxygen in Cu for the growth of large single-crystalline graphene

Applied Surface Science

Volumn 408, Issue , 2017, Pages 142-149

  Ding, Dong ^a   Solís Fernández, Pablo ^a   Yunus, Rozan Mohamad ^a   Hibino, Hiroki ^b   Ago, Hiroki ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b KWANSEI GAKUIN UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Cu catalyst; Growth mechanism; Nucleation density; Single crystalline graphene

Indexed keywords

CATALYSTS; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DISSOLVED OXYGEN; GRAIN GROWTH; GRAPHENE; METAL CLADDING; NUCLEATION;

CHEMICAL VAPOR DEPOSITIONS (CVD); COPPER OXIDE LAYERS; CU-CATALYSTS; GROWTH MECHANISMS; HIGH TEMPERATURE; LOW TEMPERATURES; NUCLEATION DENSITIES; SINGLE-CRYSTALLINE;

COPPER OXIDES;

EID: 85014942872     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2017.02.250     Document Type: Article

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