Spatially Controlled Nucleation of Single-Crystal Graphene on Cu Assisted by Stacked Ni

ACS Nano

Volumn 10, Issue 12, 2016, Pages 11196-11204

  Ding, Dong ^a   Solís Fernández, Pablo ^a   Hibino, Hiroki ^b   Ago, Hiroki ^a  

^a KYUSHU UNIVERSITY   (Japan)

^b KWANSEI GAKUIN UNIVERSITY   (Japan)

Author keywords

chemical vapor deposition; crystal growth; field effect transistors; single crystal graphene

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEPOSITION; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHENE TRANSISTORS; METAL CLADDING; NICKEL; NUCLEATION; QUALITY CONTROL; VAPOR DEPOSITION;

CONTROLLED NUCLEATION; DESIRED POSITION; DEVICE FABRICATIONS; INDUSTRIAL PROCESSING; MILLIMETER-SCALE; NUCLEATION SITES; SINGLE-CRYSTAL GRAINS; SPATIAL CONTROL;

SINGLE CRYSTALS;

EID: 85008354523     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.6b06265     Document Type: Article

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