Effect of copper foil annealing process on large graphene domain growth by solid source-based chemical vapor deposition

Journal of Materials Science

Volumn 51, Issue 15, 2016, Pages 7220-7228

  Sharma, Kamal P ^a   Shinde, Sachin M ^a   Rosmi, Mohamad Saufi ^a,b   Sharma, Subash ^a   Kalita, Golap ^a   Tanemura, Masaki ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b SULTAN IDRIS EDUCATION UNIVERSITY   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; CATALYSTS; DEPOSITION; GRAPHENE; METAL CLADDING; NUCLEATION; RECRYSTALLIZATION (METALLURGY); VAPOR DEPOSITION;

ANNEALING PROCESS; ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; CRITICAL FACTORS; CRYSTALLOGRAPHIC STRUCTURE; EFFECT OF COPPERS; ELECTRON BACKSCATTERED DIFFRACTION ANALYSIS; NUCLEATION DENSITIES; RECRYSTALLIZATION PROCESS;

CHEMICAL VAPOR DEPOSITION;

EID: 84969498785     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-016-0003-8     Document Type: Article

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