The benefits of SiC mosfets in a T-type inverter for grid-tie applications

IEEE Transactions on Power Electronics

Volumn 32, Issue 4, 2017, Pages 2808-2821

  Anthon, Alexander ^a   Zhang, Zhe ^a   Andersen, Michael A E ^a   Holmes, Donald Grahame ^b   McGrath, Brendan ^b   Teixeira, Carlos Alberto ^b  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b RMIT UNIVERSITY   (Australia)

Author keywords

Photovoltaic (PV); semiconductor losses; Si IGBT; SiC MOSFET; T type inverter

Indexed keywords

COST EFFECTIVENESS; ELECTRIC INVERTERS; POWER CONVERTERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON CARBIDE; SWITCHING; WIDE BAND GAP SEMICONDUCTORS;

MULTILEVEL CONVERTER; NEUTRAL POINT CLAMPED INVERTERS; PHOTOVOLTAIC; SEMICONDUCTOR CONDUCTION; SEMICONDUCTOR LOSS; SIC MOSFET; SILICON CARBIDE MOSFETS; T-TYPE INVERTER;

MOSFET DEVICES;

EID: 85011101266     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2016.2582344     Document Type: Article

References (33)

1. REN21, "Renewables 2015: Global status report," Feb. 2015. [Online]. Available: http://www.ren21.net
2. T. Kerekes, R. Teodorescu, P. Rodriguez, G. Vazquez, and E. Aldabas, "A new high-efficiency single-phase transformerless pv inverter topology," IEEE Trans. Ind. Electron., vol. 58, no. 1, pp. 184-191, Jan. 2011.
3. R. Teichmann and S. Bernet, "A comparison of three-level converters versus two-level converters for low-voltage drives, traction, and utility applications," IEEE Trans. Ind. Appl., vol. 41, no. 3, pp. 855-865, May 2005.
4. M. Schweizer, T. Friedli, and J. Kolar, "Comparative evaluation of advanced three-phase three-level inverter/converter topologies against twolevel systems," IEEE Trans. Ind. Electron., vol. 60, no. 12, pp. 5515-5527, Dec. 2013.
5. D. G. Holmes and T. A. Lipo, Pulse Width Modulation For Power Converters: Principles and Practice. New York, NY, USA:Wiley-IEEE Press, 2003.
6. A. Nabae, I. Takahashi, and H. Akagi, "A new neutral-point-clamped PWM inverter," IEEE Trans. Ind. Appl., vol. IA-17, no. 5, pp. 518-523, Sep. 1981.
7. T. Bruckner and S. Bernet, "Estimation and measurement of junction temperatures in a three-level voltage source converter," IEEE Trans. Power Electron., vol. 22, no. 1, pp. 3-12, Jan. 2007.
8. T. Bruckner, S. Bernet, and H. Guldner, "The active NPC converter and its loss-balancing control," IEEE Trans. Ind. Electron., vol. 52, no. 3, pp. 855-868, Jun. 2005.
9. M. Schweizer and J. Kolar, "Design and implementation of a highly efficient three-level t-type converter for low-voltage applications," IEEE Trans. Power Electron., vol. 28, no. 2, pp. 899-907, Feb. 2013.
10. L. Ma et al., "The high efficiency transformer-less PV inverter topologies derived from NPC topology," in Proc. 13th Eur. Conf. Power Electron. Appl., Sep. 2009, pp. 1-10.
11. H. Uemura, F. Krismer, and J. Kolar, "Comparative evaluation of T-Type topologies comprising standard and reverse-blocking IGBTs," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2013, pp. 1288-1295.
12. E. Gurpinar andA. Castellazzi, "Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs and GaN HEMTs," IEEE Trans. Power Electron., vol. 31, no. 10, pp. 7148-7160, Oct. 2016.
13. IEEE Application Guide for IEEE Std 1547(TM), IEEE Standard for InterconnectingDistributed ResourcesWith Electric Power Systems, IEEE Std. 1547.2-2008, Apr. 15, 2009.
14. D. Leuenberger and J. Biela, "Comparison of a soft switched TCM T-type inverter to hard switched inverters for a 3 phase PV grid interface," in Proc. 15th Int. Power Electron. Motion Control Conf., Sep. 2012, pp. LS1d.1-1-LS1d.1-8.
15. J. Biela, M. Schweizer, S.Waffler, and J. Kolar, "SiC versus Si: Evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors," IEEE Trans. Ind. Electron., vol. 58, no. 7, pp. 2872-2882, Jul. 2011.
16. H. Kosai, J. Scofield, S. McNeal, B. Jordan, and B. Ray, "Design and performance evaluation of a 200 C interleaved boost converter," IEEE Trans. Power Electron., vol. 28, no. 4, pp. 1691-1699, Apr. 2013.
17. C.-M. Ho et al., "Practical design and implementation procedure of an interleaved boost converter using SiC diodes for PV applications," IEEE Trans. Power Electron., vol. 27, no. 6, pp. 2835-2845, Jun. 2012.
18. M. Imaizumi and N. Miura, "Characteristics of 600, 1200, and 3300 V planar SiC-MOSFETs for energy conversion applications," IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 390-395, Feb. 2015.
19. A. Vazquez et al., "On the use of front-end cascode rectifiers based on normally on SiC JFET and Si MOSFET," IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2418-2427, May 2014.
20. A. Anthon, Z. Zhang, M. A. E. Andersen, and T. Franke, "Efficiency investigations of a 3kW T-type inverter for switching frequencies up to 100 kHz," in Proc. Int. Power Electron. Conf., May 2014, pp. 78-83.
21. C.-M. Ho, H. Breuninger, S. Pettersson, G. Escobar, and F. Canales, "A comparative performance study of an interleaved boost converter using commercial Si and SiC diodes for PV applications," IEEE Trans. Power Electron., vol. 28, no. 1, pp. 289-299, Jan. 2013.
22. F. Guedon, S. Singh, R. McMahon, and F. Udrea, "Boost converter with SiC JFETs: Comparison with coolmos and tests at elevated case temperature," IEEE Trans. Power Electron., vol. 28, no. 4, pp. 1938-1945, Apr. 2013.
23. A. Anthon, J. C. Hernandez, Z. Zhang, andM. A. E. Andersen, "Switching investigations on a SiC MOSFET in a to-247 package," in Proc. IEEE 40th Annu. Conf. Ind. Electron. Soc., Oct. 2014, pp. 1854-1860.
24. S. Safari, A. Castellazzi, and P. Wheeler, "Experimental and analytical performance evaluation of SiC power devices in the matrix converter," IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2584-2596, May 2014.
25. R. Wang et al., "A high-temperature SiC three-phase AC-DC converter design for 100 C ambient temperature," IEEE Trans. Power Electron., vol. 28, no. 1, pp. 555-572, Jan. 2013.
26. A. Anthon, Z. Zhang, and M. A. E. Andersen, "Comparison of a state of the art Si IGBT and next generation fast switching devices in a 4 kW boost converter," in Proc. 2015 IEEE Energy Convers. Congr. Expo., Sep. 2015, pp. 3003-3011.
27. D. Christen, U. Badstuebner, J. Biela, and J. Kolar, "Calorimetric power loss measurement for highly efficient converters," in Proc. Int. Power Electron. Conf., Jun. 2010, pp. 1438-1445.
28. Y. Liu, L. Shi, andY. Li, "Comparison analysis of loss calculationmethods and measurement techniques in power electronics and motor systems," in Proc. Int. Conf. Elect. Mach. Syst., Oct. 2013, pp. 530-534.
29. L. Aarniovuori, A. Kosonen, P. Sillanpaa, and M. Niemela, "High-power solar inverter efficiency measurements by calorimetric and electric methods," IEEE Trans. Power Electron., vol. 28, no. 6, pp. 2798-2805, Jun. 2013.
30. G. Carrara, S. Gardella, M. Marchesoni, R. Salutari, and G. Sciutto, "A new multilevel PWMmethod: A theoretical analysis," IEEE Trans. Power Electron., vol. 7, no. 3, pp. 497-505, Jul. 1992.
31. B. McGrath and D. Holmes, "A comparison of multicarrier PWM strategies for cascaded and neutral point clamped multilevel inverters," in Proc. IEEE 31st Annu. Power Electron. Spec. Conf., 2000, pp. 674-679, vol. 2.
32. M. O stling, R. Ghandi, and C.-M. Zetterling, "SiC power devices: Present status, applications and future perspective," in Proc. IEEE 23rd Int. Symp. Power Semicond. Devices ICs, 2011, pp. 10-15.
33. Y. Kim, H. Cha, B.-M. Song, and K. Lee, "Design and control of a grid-connected three-phase 3-level NPC inverter for Building Integrated Photovoltaic systems," in Proc. IEEE PES Innovative SmartGrid Technol., Jan. 2012, pp. 1-7.