Improved Output Power of InGaN-Based Ultraviolet LEDs Using a Heavily Si-Doped GaN Insertion Layer Technique

IEEE Journal of Quantum Electronics

Volumn 48, Issue 2, 2012, Pages 175-181

  Chiu, Ching Hsueh ^a   Tu, Po Min ^a   Li, Jin Chai ^a   Li, Zhen Yu ^a   Zan, Hsiao Wen ^a   Lu, Tien Chang ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a   Lin, Chien Chung ^a   Tu, Chia Cheng ^b   Uen, Wu Yih ^b   Huang, Shih Cheng ^c   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^c ADVANCED OPTOELECTRONIC TECHNOLOGY INC   (Taiwan)

Author keywords

Internal quantum efficiency; metal organic chemical vapor deposition; nanoscale epitaxial lateral overgrowth; ultraviolet light emitting diodes

Indexed keywords

EID: 85008546397     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.2011.2170553     Document Type: Article

References (18)

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