Implant-free SiGe quantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Hellings, Geert ^a,b   Witters, Liesbeth ^a   Krom, Raymond ^a,b   Mitard, Jerome ^a   Hikavyy, Andriy ^a   Loo, Roger ^a   Schulze, Andreas ^a,b   Eneman, Geert ^a,b,c   Kerner, Christoph ^a   Franco, Jacopo ^a,b   Chiarella, Thomas ^a   Takeoka, Shinji ^a,d   Tseng, Joshua ^a,e   Wang, Wei E ^a   Vandervorst, Wilfried ^a,b   Absil, Philippe ^a   Biesemans, Serge ^a   Heyns, Marc ^a,b   De Meyer, Kristin ^a,b   Meuris, Marc ^a   Hoffmann, Thomas ^a   more..

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^d FWO ^*  (Japan)

^e TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DRIVE CURRENTS; GATE LENGTH; HALO IMPLANTS; HIGH DRIVE CURRENT; HIGH MOBILITY; LOW THERMAL BUDGET; PMOS DEVICES; PMOSFET; RAISED SOURCE/DRAIN; SI-BASED; SIGE QUANTUM WELLS;

ELECTRON DEVICES; SILICON ALLOYS;

EQUIPMENT;

EID: 79951821999     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703335     Document Type: Conference Paper

References (11)

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