메뉴 건너뛰기




Volumn 54, Issue 6, 2006, Pages 2312-2320

Multiple Time Constant Modeling of Dispersion Dynamics in Hetero Field-Effect Transistors

Author keywords

Integrated circuit modeling; MODFETs; semiconductor device modeling

Indexed keywords


EID: 85008056107     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.2006.875264     Document Type: Article
Times cited : (4)

References (29)
  • 1
    • 0028338161 scopus 로고
    • Modeling frequency dependence of GaAs MESFET characteristics
    • Jan.
    • J. Conger, A. Peczalski, and M. S. Shur, “Modeling frequency dependence of GaAs MESFET characteristics,” IEEE J. Solid-State Circuits, vol. 29, no. 1, pp. 71–76, Jan. 1994.
    • (1994) IEEE J. Solid-State Circuits , vol.29 , Issue.1 , pp. 71-76
    • Conger, J.1    Peczalski, A.2    Shur, M.S.3
  • 2
    • 0028516775 scopus 로고
    • Origin and modeling of the frequency dependent output conductance in microwave GaAs MESFET's with buried p layer
    • Oct.
    • S. Choi and M. B. Das, “Origin and modeling of the frequency dependent output conductance in microwave GaAs MESFET's with buried p layer,” IEEE Trans. Electron Devices, vol. 41, no. 10, pp. 1725–1733, Oct. 1994.
    • (1994) IEEE Trans. Electron Devices , vol.41 , Issue.10 , pp. 1725-1733
    • Choi, S.1    Das, M.B.2
  • 3
    • 0033358698 scopus 로고    scopus 로고
    • Table-based Dynamic FET model assembled from small-signal models
    • Jun.
    • C. J. Wei, Y. A. Tkachenko, and D. Bartle, “Table-based Dynamic FET model assembled from small-signal models,” IEEE Trans. Microw. Theory Tech., vol. 47, no. 6, pp. 700–705, Jun. 1999.
    • (1999) IEEE Trans. Microw. Theory Tech. , vol.47 , Issue.6 , pp. 700-705
    • Wei, C.J.1    Tkachenko, Y.A.2    Bartle, D.3
  • 4
    • 1242263490 scopus 로고    scopus 로고
    • A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC
    • Jan.
    • J. W. Lee and K. J. Webb, “A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC,” IEEE Trans. Microw. Theory Tech., vol. 52, no. 1, pp. 2–9, Jan. 2004.
    • (2004) IEEE Trans. Microw. Theory Tech. , vol.52 , Issue.1 , pp. 2-9
    • Lee, J.W.1    Webb, K.J.2
  • 5
    • 0025434757 scopus 로고
    • Frequency-dependent electrical characteristics of GaAs MESFETs
    • May
    • J. M. Golio, M. G. Miller, G. N. Maracas, and D. A. Johnson, “Frequency-dependent electrical characteristics of GaAs MESFETs,” IEEE Trans. Electron Devices, vol. 37, no. 5, pp. 1217–1227, May 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.5 , pp. 1217-1227
    • Golio, J.M.1    Miller, M.G.2    Maracas, G.N.3    Johnson, D.A.4
  • 7
    • 8444232058 scopus 로고    scopus 로고
    • Insulated gate III-N heterostructure field-effect transistors
    • G. Simin, M. A. Khan, M. S. Shur, and R. Gaska, “Insulated gate III-N heterostructure field-effect transistors,” Int. J. High-Speed Electron. Syst., vol. 14, no. 1, pp. 197–224, 2004.
    • (2004) Int. J. High-Speed Electron. Syst. , vol.14 , Issue.1 , pp. 197-224
    • Simin, G.1    Khan, M.A.2    Shur, M.S.3    Gaska, R.4
  • 8
    • 2442558123 scopus 로고    scopus 로고
    • Self-heating and trapping effects on the RF performance of GaN MESFETs
    • Apr.
    • S. S. Islam and A. F. M. Anwar, “Self-heating and trapping effects on the RF performance of GaN MESFETs,” IEEE Trans. Microw. Theory Tech., vol. 52, no. 4, pp. 1229–1236, Apr. 2004.
    • (2004) IEEE Trans. Microw. Theory Tech. , vol.52 , Issue.4 , pp. 1229-1236
    • Islam, S.S.1    Anwar, A.F.M.2
  • 10
    • 18744413012 scopus 로고    scopus 로고
    • Behavioural modelling of thermally induced distortion in RF/microwave nonlinear subsystems
    • Amsterdam, The Netherlands, Sep.
    • V. Rizzoli, D. Masotti, and F. Mastri, “Behavioural modelling of thermally induced distortion in RF/microwave nonlinear subsystems,” in Proc. 34th Eur. Microw. Conf., Amsterdam, The Netherlands, Sep. 2004, pp. 845–848.
    • (2004) Proc. 34th Eur. Microw. Conf. , pp. 845-848
    • Rizzoli, V.1    Masotti, D.2    Mastri, F.3
  • 11
    • 0742269424 scopus 로고    scopus 로고
    • Behavioral modeling of nonlinear RF power amplifiers considering memory effects
    • Dec.
    • H. Ku and J. S. Kenney, “Behavioral modeling of nonlinear RF power amplifiers considering memory effects,” IEEE Trans. Microw. Theory Tech., vol. 51, no. 12, pp. 2495–2504, Dec. 2003.
    • (2003) IEEE Trans. Microw. Theory Tech. , vol.51 , Issue.12 , pp. 2495-2504
    • Ku, H.1    Kenney, J.S.2
  • 14
    • 2342446634 scopus 로고    scopus 로고
    • Large signal modelling including low-frequency dispersion of N-channel SiGe MODFETs and MMIC applications
    • Aug.
    • I. Kallfass, T. J. Brazil, B. OhAnnaidh, P. Abele, T. Hackbarth, M. Zeuner, U. Konig, and H. Schumacher, “Large signal modelling including low-frequency dispersion of N-channel SiGe MODFETs and MMIC applications,” Solid-State Electron., vol. 48, no. 8, pp. 1433–1441, Aug. 2004.
    • (2004) Solid-State Electron. , vol.48 , Issue.8 , pp. 1433-1441
    • Kallfass, I.1    Brazil, T.J.2    OhAnnaidh, B.3    Abele, P.4    Hackbarth, T.5    Zeuner, M.6    Konig, U.7    Schumacher, H.8
  • 16
    • 0032689643 scopus 로고    scopus 로고
    • A generalized Dirichlet principle for smoothing small-signal measurements
    • May
    • A. D. Snider and P. Wilson, “A generalized Dirichlet principle for smoothing small-signal measurements,” IEEE Trans. Microw. Theory Tech., vol. 47, no. 5, pp. 636–639, May 1999.
    • (1999) IEEE Trans. Microw. Theory Tech. , vol.47 , Issue.5 , pp. 636-639
    • Snider, A.D.1    Wilson, P.2
  • 17
    • 85008055085 scopus 로고    scopus 로고
    • A universal large-signal model for hetero field-effect transistors
    • Amsterdam, The Netherlands, Oct.
    • I. Kallfass, C. Schick, H. Schumacher, and T. J. Brazil, “A universal large-signal model for hetero field-effect transistors,” in Proc. 12th GaAs Symp. Eur. Microw. Week, Amsterdam, The Netherlands, Oct. 2004, pp. 55–58.
    • (2004) Proc. 12th GaAs Symp. Eur. Microw. Week , pp. 55-58
    • Kallfass, I.1    Schick, C.2    Schumacher, H.3    Brazil, T.J.4
  • 18
    • 0001737390 scopus 로고
    • A nonlinear GaAsFET model for use in the design of output circuits for power amplifiers
    • Dec.
    • W. R. Curtice and M. Ettenberg, “A nonlinear GaAsFET model for use in the design of output circuits for power amplifiers,” IEEE Trans. Microw. Theory Tech., vol. MTT-33, no. 12, pp. 1383–1394, Dec. 1985.
    • (1985) IEEE Trans. Microw. Theory Tech. , vol.MTT-33 , Issue.12 , pp. 1383-1394
    • Curtice, W.R.1    Ettenberg, M.2
  • 19
    • 79960354246 scopus 로고
    • A new empirical nonlinear model for HEMT and MESFET devices
    • Dec.
    • I. Angelov, H. Zirath, and N. Rorsman, “A new empirical nonlinear model for HEMT and MESFET devices,” IEEE Trans. Microw. Theory Tech., vol. 40, no. 12, pp. 2258–2266, Dec. 1992.
    • (1992) IEEE Trans. Microw. Theory Tech. , vol.40 , Issue.12 , pp. 2258-2266
    • Angelov, I.1    Zirath, H.2    Rorsman, N.3
  • 20
    • 0021391769 scopus 로고
    • Design of broadband power GaAs FET amplifiers
    • Mar.
    • Y. Tajima and P. D. Miller, “Design of broadband power GaAs FET amplifiers,” IEEE Trans. Microw. Theory Tech., vol. MTT-32, no. 3, pp. 261–267, Mar. 1984.
    • (1984) IEEE Trans. Microw. Theory Tech. , vol.MTT-32 , Issue.3 , pp. 261-267
    • Tajima, Y.1    Miller, P.D.2
  • 21
    • 0031342411 scopus 로고    scopus 로고
    • A scalable general-purpose model for microwave FET's including DC/AC dispersion effects
    • Dec.
    • V. I. Cojocaru and T. J. Brazil, “A scalable general-purpose model for microwave FET's including DC/AC dispersion effects,” IEEE Trans. Microw. Theory Tech., vol. 45, no. 12, pp. 2248–2255, Dec. 1997.
    • (1997) IEEE Trans. Microw. Theory Tech. , vol.45 , Issue.12 , pp. 2248-2255
    • Cojocaru, V.I.1    Brazil, T.J.2
  • 22
    • 2342530339 scopus 로고    scopus 로고
    • A globally-continuous, charge-conservative, nonlinear equivalent circuit model for RF MOSFETs
    • Munich, Germany, Sep.
    • B. OhAnnaidh and T. J. Brazil, “A globally-continuous, charge-conservative, nonlinear equivalent circuit model for RF MOSFETs,” in Proc. 11th GaAs Symp. Eur. Microw. Week, Munich, Germany, Sep. 2003, pp. 65–68.
    • (2003) Proc. 11th GaAs Symp. Eur. Microw. Week , pp. 65-68
    • OhAnnaidh, B.1    Brazil, T.J.2
  • 24
    • 0025382934 scopus 로고
    • Modelling of frequency and temperature effects in GaAs MESFETs
    • Feb. CD ROM
    • P. C. Canfield, S. C. F. Lam, and D. J. Allstot, “Modelling of frequency and temperature effects in GaAs MESFETs,” IEEE J. Solid-State Circuits, vol. 25, no. 2, pp. 299–306, Feb. 1990, CD ROM.
    • (1990) IEEE J. Solid-State Circuits , vol.25 , Issue.2 , pp. 299-306
    • Canfield, P.C.1    Lam, S.C.F.2    Allstot, D.J.3
  • 25
    • 0026103702 scopus 로고
    • High-frequency equivalent circuit of GaAs FET's for large-signal applications
    • Feb.
    • M. Berroth and R. Bosch, “High-frequency equivalent circuit of GaAs FET's for large-signal applications,” IEEE Trans. Microw. Theory Tech., vol. 39, no. 2, pp. 224–229, Feb. 1991.
    • (1991) IEEE Trans. Microw. Theory Tech. , vol.39 , Issue.2 , pp. 224-229
    • Berroth, M.1    Bosch, R.2
  • 26
    • 0024048518 scopus 로고
    • A new method for determining the FET small-signal equivalent circuit
    • Jul.
    • G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, “A new method for determining the FET small-signal equivalent circuit,” IEEE Trans. Microw. Theory Tech., vol. 36, no. 7, pp. 1151–1159, Jul. 1988.
    • (1988) IEEE Trans. Microw. Theory Tech. , vol.36 , Issue.7 , pp. 1151-1159
    • Dambrine, G.1    Cappy, A.2    Heliodore, F.3    Playez, E.4
  • 27
    • 0036852182 scopus 로고    scopus 로고
    • A spline large-signal FET model based on bias-dependent pulsed I-V measurement
    • Nov.
    • K. Koh, H. M. Park, and S. Hong, “A spline large-signal FET model based on bias-dependent pulsed I-V measurement,” IEEE Trans. Microw. Theory Tech., vol. 50, no. 11, pp. 2598–2603, Nov. 2002.
    • (2002) IEEE Trans. Microw. Theory Tech. , vol.50 , Issue.11 , pp. 2598-2603
    • Koh, K.1    Park, H.M.2    Hong, S.3
  • 28
    • 33749233864 scopus 로고    scopus 로고
    • One single travelling-wave MMIC for highly linear broadband mixers and variable gain amplifiers
    • Long Beach, CA, Jun. CD ROM
    • I. Kallfass, H. Schumacher, T. Purtova, A. Brokmeier, and W. Ludwig, “One single travelling-wave MMIC for highly linear broadband mixers and variable gain amplifiers,” in IEEE MTT-S Int. Microw. Symp., Long Beach, CA, Jun. 2005, CD ROM.
    • (2005) IEEE MTT-S Int. Microw. Symp.
    • Kallfass, I.1    Schumacher, H.2    Purtova, T.3    Brokmeier, A.4    Ludwig, W.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.