MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 153-157

  Keiper, D ^a   Velling, P ^a   Brennemann, A ^a   Agethen, M ^a   Van den Berg, C ^a   Bertenburg, R M ^a   Schineller, B ^b   Heuken, M ^b  

^a Innovative Processing AG   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

3. High electron mobility transistors; A3. Metalorganic vapor phase epitaxy; B1. Carbon; B1. Ditertiarybutylsilane; B1. InAlAs InP; B1. Oxygen; B1. Tertiarybutylarsine

Indexed keywords

GETTERS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

OSCILLATION FREQUENCIES;

SEMICONDUCTOR GROWTH;

EID: 0037291256     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01932-2     Document Type: Conference Paper

References (4)

1. C. Pobanz, M. Matloubian, V. Radisic, G. Raghavan, M. Case, M. Micovic, M. Hu, C. Nyugen, S. Weinreb, L. Samoska, Conference Proceedings of the InP and Related Materials 2000, Williamsburg, USA, p. 67.
2. A.K. Oki, D.C. Streit, R. Lai, A. Gutierrez-Aitken, Y.C. Chen, R. Grundbacher, P.C. Grossman, T. Block, P. Chin, M. Barsky, D. Sawdai, M. Wojtowicz, E. Kaneshiro, H.C. Yen, Conference Proceedings of the InP and Related Materials 2000, Williamsburg, USA, p. 7.
3. H. Kitabayashi, Y. Umeda, T. Furuta, N. Watanabe, T. Akeyoshi, Y. Yamane, K. Murata, N. Shimizu, Y. Ishii, Conference Proceedings of the InP and Related Materials 2000, Williamsburg, USA, p. 329.
4. Velling P., Agethen M., Prost W., Tegude F.J. Journal of Crystal Growth. 221:2000;722.