Verification of a frequency dispersion model in the performance of a GaAs pHEMT travelling-wave MMIC

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 381-384

  Kallfass, I ^a   Zhang, C ^a   Grunenputt J ^b   Teyssandier, C ^b   Schumacher, H ^a  

^a UNIVERSITY OF ULM   (Germany)

^b United Monolithic Semiconductors GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DISPERSIONS; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; TRAVELING WAVE TUBES;

DISPERSION MODELS; FREQUENCY DISPERSION MODELS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 33847211080     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

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