Large-signal modelling including low-frequency dispersion of n-channel SiGe MODFETs and MMIC applications

Solid-State Electronics

Volumn 48, Issue 8, 2004, Pages 1433-1441

  Kallfass, Ingmar ^a   Brazil, Thomas J ^b   OhAnnaidh, Breandan ^b   Abele, Peter ^a   Hackbarth, Thomas ^c   Zeuner, Marco ^c   König, Ulf ^c   Schumacher, Hermann ^a  

^a UNIVERSITY OF ULM   (Germany)

^b UNIVERSITY COLLEGE DUBLIN   (Ireland)

^c DAIMLER AG   (Germany)

Author keywords

Active FET mixer; Capacitance model; Large signal model; Low frequency dispersion; Strained Si SiGe MODFET; Travelling wave amplifier

Indexed keywords

BANDWIDTH; CAPACITANCE; COMPUTER SIMULATION; ELECTRIC NETWORK TOPOLOGY; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OPTIMIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

ACTIVE FET MIXERS; CAPACITANCE MODELS; LARGE-SIGNAL MODELS; LOW-FREQUENCY DISPERSION; STRAINED-SI/SIGE MODFET; TRAVELLING-WAVE AMPLIFIERS;

FIELD EFFECT TRANSISTORS;

EID: 2342446634     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.01.020     Document Type: Article

References (16)

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