A spline large-signal FET model based on bias-dependent pulsed I-V measurement

IEEE Transactions on Microwave Theory and Techniques

Volumn 50, Issue 11 SPEC, 2002, Pages 2598-2603

  Koh, Kyoungmin ^b   Park, Hyun Min ^b   Hong, Songcheol ^a,b  

^a IEEE

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

GaAs MESFET; Large signal model; Nonquasi static model; Pulsed I V; Self heating effects; Spline; Table based model; Trap effects

Indexed keywords

CAPACITORS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC NETWORK PARAMETERS; ELECTRON TRAPS; EQUIVALENT CIRCUITS; INTERMODULATION; MATHEMATICAL MODELS; SCATTERING PARAMETERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL DISTORTION;

INTERMODULATION DISTORTION; LARGE SIGNAL MODEL; NONQUASISTATIC MODEL; TRAP EFFECTS;

MESFET DEVICES;

EID: 0036852182     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2002.804509     Document Type: Article

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