Finite-Element Modeling and Optimization-Based Parameter Extraction Algorithm for NPT-IGBTs

IEEE Transactions on Power Electronics

Volumn 24, Issue 5, 2009, Pages 1417-1427

  Chibante, Rui ^a   Araújo, Armando ^b   Carvalho, Adriano ^b  

^a INSTITUTO SUPERIOR DE ENGENHARIA DO PORTO   (Portugal)

^b UNIVERSITY OF PORTO   (Portugal)

Author keywords

Insulated gate bipolar transistors (IGBTs); optimization methods; parameter estimation; semiconductor device modeling; simulated annealing

Indexed keywords

EID: 85008050113     PISSN: 08858993     EISSN: 19410107     Source Type: Journal    
DOI: 10.1109/TPEL.2009.2012388     Document Type: Article

References (36)

1. R. Kraus and H. Mattausch, “Status and trends of power semiconductor device models for circuit simulation,” IEEE Trans. Power Electron., vol. 13, no. 3, pp. 452–465, May 1998.
2. D. Metzner, T. Vogler, and D. Schröder, “A modular concept for the circuit simulation of bipolar power semiconductors,” IEEE Trans. Power Electron., vol. 9, no. 5, pp. 506–513, Sep. 1994.
3. A. R. Hefner and D. M. Diebolt, “An experimentally verified IGBT model implementation in the Saber circuit simulator,” IEEE Trans. Power Electron., vol. 9, no. 5, pp. 532–542, Sep. 1994.
4. A. R. Hefner and D. L. Blackburn, “An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor,” Solid State Electron., vol. 31, no. 10, pp. 1513–1532, 1988.
5. G. Busatto, F. Iannuzzo, and P. Grimaldi, “Lumped charge PSPICE model for high-voltage IGBTs,” in Conf. Rec. 35th IAS Annu. Meeting, 2000, vol. 5, pp. 2896–2902.
6. K. Sheng, B. W. Williams, and S. J. Finney, “A review of IGBT models,” IEEE Trans. Power Electron., vol. 15, no. 6, pp. 1250–1266, Nov. 2000.
7. H. Goebel, “A unified method for modeling semiconductor power devices,” IEEE Trans. Power Electron., vol. 9, no. 5, pp. 497–505, Sep. 1994.
8. R. Kraus, P. Turkes, and J. Sigg, “Physics-based models of power semiconductor devices for the circuit simulator SPICE,” in Proc. 29th Annu. IEEE Power Electron. Spec. Conf. (PESC 1998), pp. 1726–1731.
9. P. Leturcq, J. Debrie, and O. Berraies, “A distributed model of IGBTs for circuit simulation,” in Proc. 7th Eur. Conf. Power Electron. Appl. (EPE 1997), pp. 494–501.
10. A. Araújo, A. Carvalho, and J. L. M. D. Carvalho, “A new approach for analogue simulation of bipolar semiconductors,” in Proc. 2nd Braz. Conf. PowerElectron. (COBEP 1997), Belo-Horizonte, Brazil, pp. 761–765.
11. A. Araújo, A. Carvalho, and J. L. M. D. Carvalho, “Power P-I-N diode modeling using SPICE,” in Proc. IEEE Int. Symp. Ind. Electron. (ISIE 1997), Guimarães, Portugal, vol. 2, pp. 211–216.
12. A. Araújo, “Modelação de semicondutores bipolares—Formulacao de um novo metodo para simulação em circuitos electrónicos de potência,” Ph.D. dissertation, Faculdade de Engenharia da Universidade do Porto. Porto, Portugal, 1998.
13. R. Chibante, A. Araújo, and A. Carvalho, “A new physics based SPICE model for NPT IGBTs,” in Proc. 29th Annu. Conf. IEEE Ind. Electron. Soc. (IECON 2003), Roanoke, VA, pp. 1156–1161.
14. R. Chibante, A. Araújo, and A. Carvalho, “A new physics based SPICE subcircuit model for insulated gate bipolar transistors (IGBTs),” presented at the 10th Eur. Conf. Power Electron. Appl. (EPE 2003), Toulouse, France.
15. R. Chibante, A. Araújo, and A. Carvalho, “Modeling buffer layer IG-BTs with an efficient parameter extraction method,” in Proc. 36th Annu. IEEE Power Electron. Spec. Conf. (PESC 2005), Recife, Brazil, pp. 2194–2200.
16. B. Allard, H. Morel, W. Mi, G. Hatem, K. Ammous, and D. Bergogne, “Systematic procedure to map the validity range of insulated-gate device models,” presented at the 10th Eur. Conf. Power Electron. Appl. (EPE 2003), Toulouse, France.
17. X. Kang, E. Santi, J. L. Hudgins, P. R. Palmer, and J. F. Donlon, “Parameter extraction for a physics-based circuit simulator IGBT model,” in Proc. 18th Annu. IEEE Appl. Power Electron. Conf. Expo. (APEC 2003), Miami Beach, FL, vol. 2, pp. 946–952.
18. A. Claudio, M. Cotorogea, andM. A. Rodriguez, “Parameterextractionfor physics-based IGBT models by electrical measurements,” in Proc. 33rd Annu. IEEE PowerElectron. Spec. Conf. (PESC 2002), Cairns, Australia, vol. 3, pp. 1295–1300.
19. P. O. Lauritzen, G. K. Andersen, and M. Helsper, “A basic IGBT model with easy parameter extraction,” in Proc. 32nd Annu. IEEE Power Electron. Spec. Conf. (PESC 2001), Vancouver, BC, Canada, vol. 4, pp. 2160–2165.
20. A. R. Hefner and S. Bouche, “Automated parameter extraction software for advanced IGBT modeling,” in Proc. 7th Workshop Comput. Power Electron. (COMPEL 2000), pp. 10–18.
21. J. Sigg, P. Turkes, and R. Kraus, “Parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model,” in Conf. Rec. 32nd IAS Annu. Meeting, New Orleans, LA, 1997, vol. 2, pp. 1166–1173.
22. A. T. Bryant, P. R. Palmer, J. L. Hudgins, E. Santi, and X. Kang, “The use of a formal optimisation procedure in automatic parameter extraction of power semiconductor devices,” in Proc. 34th Annu. IEEE Power Electron. Spec. Conf. (PESC 2003), vol. 2, pp. 882–887.
23. X. Kang, X. Wang, L. Lu, E. Santi, J. L. Hudgins, and P. R. Palmer, “Physical modeling of IGBT turn on behavior,” in Conf. Rec. 38th IEEE Ind. Appl. Conf. (IAS 2003), vol. 2, pp. 988–994.
24. IsSpice4 User’s Guide, Intusoft, Carson, CA, 2004.
25. P. R. Palmer, E. Santi, J. L. Hudgins, X. Kang, J. C. Joyce, and P. Y. Eng, “Circuit simulator models for the diode and IGBT with full temperature dependent features,” IEEE Trans. Power Electron., vol. 18, no. 5, pp. 1220–1229, Sep. 2003.
26. W. B. Bickford, A First Course in the Finite Element Method, R. D. Irwin, Ed. Homewood, IL: Irwin, 1990.
27. J.-L. Massol, “Répresentation des phénomènes de diffusion dans la modelisation des composants bipolaires de puissance. Application a la simulation du recouvrement inverse de la diode,” Ph.D. dissertation, INSA de Toulouse. Toulouse, France, 1993.
28. A. Araújo and A. Carvalho, “SPICE implementation of a FEM based model for bipolar power semiconductors,” presented at the 10th Eur. Conf. Power Electron. Appl. (EPE 2003), Toulouse, France.
29. M. O. Berraies, “Modeles de composants semiconducteurs pour la simulation des circuits en electronique de puissance,” Ph.D. dissertation, Univ. Paul Sabatier de Toulouse. Toulouse, France, 1998.
30. A. R. Hefner, “An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT),” IEEE Trans. Power Electron., vol. 5, no. 4,pp. 459–468, Oct. 1990.
31. P. M. Igic, P. A. Mawby, M. S. Towers, W. Jamal, and S. Batcup, “Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model,” Microelectron. Rel., vol. 42, no. 7, pp. 1045–1052, 2002.
32. C. M. Tan and K. Tseng, “Using power diode models for circuit simulations—A comprehensive review,” IEEE Trans. Ind. Electron., vol. 46, no. 3, pp. 637–645, Jun. 1999.
33. K. Sheng, S.J. Finney, and B. W. Williams, “A new analytical IGBT model with improved electrical characteristics,” IEEE Trans. Power Electron., vol. 14, no. 1, pp. 98–107, Jan. 1999.
34. A. T. Bryant, X. Kang, E. Santi, P. R. Palmer, and J. L. Hudgins, “Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models,” IEEE Trans. Power Electron., vol. 21, no. 2, pp. 295–309, Mar. 2006.
35. R. Chibante, A. Araújo, and A. Carvalho, “A simple and efficient parameter extraction procedure for physics based IGBT models,” presented at the 11th Int. Power Electron. Motion Control Conf. (EPE-PEMC 2004), Riga, Latvia.
36. B. Allard, H. Garrab, W. Mi, K. Ammous, and H. Morel, “Switching parameter maps—A new approach to the validity domain of power device models,” in Proc. 34th Annu. IEEE Power Electron. Spec. Conf. (PESC 2003), vol. 3, pp. 1220–1224.