Lumped charge PSPICE model for high-voltage IGBTs

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 5, Issue , 2000, Pages 2896-2902

  Busatto, G ^a  

^a UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON SCATTERING; SEMICONDUCTOR DEVICE MODELS;

DEPLETION CAPACITANCE; SOFTWARE PACKAGE PSPICE;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034517267     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. A.R.Hefner, INSTANT - IGBT Network Simulation and Transient Analysis Tool, NIST Special Publication 400-88, 1992, Gaithersburg, MD.
2. A.G.M.Strollo, A new IGBT circuit model for SPICE simulation, Proc. PESC 1997, pp. 133-138.
3. P.Leturcq, A study of distributed switching processes in IGBTs and other power bipolar devices, Proc. PESC 1997, pp. 139-147.
4. Kraus, R.; Turkes, P.; Sigg, J., Physics-based models of power semiconductor devices for the circuit simulator SPICE, Proc. PESC 1998, Vol. 2, pp. 1726-1731.
5. Mitter, C.S.; Hefner, A.R.; Chen, D.Y.; Lee, F.C., Insulated Gate Bipolar Transistor (IGBT) modeling using IG-SPICE, IEEE Transactions on Industry Applications, Vol. 30, No. 1, Jan.-Feb. 1993, pp. 24-33.
6. A.R.Hefner, Jr., Modeling Buffer Layer IGBTs for Circuit Simulation, IEEE Transactions on Power Electronics, Vol. 10, No. 2, March 1995, pp. 111-123
7. PSPICE User's Guide, Release 8, MicroSim Corporation, Irvine (CA), USA, 1997.
8. C. L. Ma, P. O. Lauritzen, P. Lin, I. Budihardjo, J. Sigg, A systematic approach to modeling of power semiconductor devices based on charge control principles, Proc. PESC 1994, Vol. 1, pp. 31-37.
9. F.Iannuzzo, et al., A circuit model for GTO based on lumped-charge approach, Proc. ISPS 1998, pp. 83-88.
10. J. M. Dorkel, P. Leturcq, Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level, Solid-State Electronics, Vol. 24, No. 9, 1981, pp. 821-825.
11. MEDICI User guide, Technology Modeling Associates Inc., 1993 (Palo Alto), USA.