-
1
-
-
0032669914
-
Direct extraction of semiconductor device parameters using lateral optimization method
-
845-848
-
A. Ortiz-Conde, Y. Ma, J. Thomson, E. Santos, J.J. Liou, F.J. Garcia Snchez, M. Lei, J. Finol, and P. Layman. Direct extraction of semiconductor device parameters using lateral optimization method. Solid-State Electronics, 43:845-848, 1999.
-
(1999)
Solid-State Electronics
, vol.43
-
-
Ortiz-Conde, A.1
Ma, Y.2
Thomson, J.3
Santos, E.4
Liou, J.J.5
Garcia Snchez, F.J.6
Lei, M.7
Finol, J.8
Layman, P.9
-
2
-
-
0027886392
-
Technological parameter identification of PIN-diode using transient signal parameter fits
-
Brighton
-
C-C Lin, B. Allard, H. Morel, and J-P Chante. Technological parameter identification of PIN-diode using transient signal parameter fits. In EPE Conf. Rec., pages 29-33, Brighton, 1993.
-
(1993)
EPE Conf. Rec.
, pp. 29-33
-
-
Lin, C.-C.1
Allard, B.2
Morel, H.3
Chante, J.-P.4
-
3
-
-
0042258662
-
An automatic parameter extraction technique for an improved PIN diode circuit model
-
Trondheim
-
A.G.M. Strollo and E. Napoli. An automatic parameter extraction technique for an improved PIN diode circuit model. In EPE Conf. Rec., volume 4, pages 111-116, Trondheim, 1997.
-
(1997)
EPE Conf. Rec.
, vol.4
, pp. 111-116
-
-
Strollo, A.G.M.1
Napoli, E.2
-
4
-
-
0034795058
-
Circuit simulator models for the diode and IGBT with full temperature dependent features
-
Vancouver, To appear in IEEE Trans. Power Electronics
-
P.R. Palmer, J.C. Joyce, P.Y. Eng, J. Hudgins, E. Santi, and R. Dougal. Circuit simulator models for the diode and IGBT with full temperature dependent features. In PESC Conf. Rec., pages 2171-2177, Vancouver, 2001. To appear in IEEE Trans. Power Electronics.
-
(2001)
PESC Conf. Rec.
, pp. 2171-2177
-
-
Palmer, P.R.1
Joyce, J.C.2
Eng, P.Y.3
Hudgins, J.4
Santi, E.5
Dougal, R.6
-
5
-
-
0042258669
-
Bipolar semiconductor device models for computer-aided design in power electronics
-
Seville
-
Ph. Leturcq, M.O. Berraies, J-L Debrie, P. Gillet, M.A. Kallala, and J-L Massol. Bipolar semiconductor device models for computer-aided design in power electronics. In EPE Conf. Rec., pages 222-227, Seville, 1995.
-
(1995)
EPE Conf. Rec.
, pp. 222-227
-
-
Leturcq, Ph.1
Berraies, M.O.2
Debrie, J.-L.3
Gillet, P.4
Kallala, M.A.5
Massol, J.-L.6
-
6
-
-
0011892078
-
A distributed model of IGBTs for circuit simulation
-
Trondheim
-
Ph. Leturcq, J-L Debrie, and M.O. Berraies. A distributed model of IGBTs for circuit simulation. In EPE Conf. Rec., volume 1, pages 494-501, Trondheim, 1997.
-
(1997)
EPE Conf. Rec.
, vol.1
, pp. 494-501
-
-
Leturcq, Ph.1
Debrie, J.-L.2
Berraies, M.O.3
-
7
-
-
0042759882
-
Simulation and optimisation of diode and IGBT interaction in a chopper cell using MATLAB and Simulink
-
Pittsburgh, October
-
A.T. Bryant, P.R. Palmer, J.L. Hudgins, and E. Santi. Simulation and optimisation of diode and IGBT interaction in a chopper cell using MATLAB and Simulink. In IAS Conf. Rec., Pittsburgh, October 2002.
-
(2002)
IAS Conf. Rec.
-
-
Bryant, A.T.1
Palmer, P.R.2
Hudgins, J.L.3
Santi, E.4
-
8
-
-
0036072956
-
Parameter extraction for a power diode circuit simulator model including temperature dependent effects
-
Dallas
-
X. Kang, A. Caiafa, E. Santi, J.L. Hudgins, and P.R. Palmer. Parameter extraction for a power diode circuit simulator model including temperature dependent effects. In IEEE APEC Conf. Rec., Dallas, 2002.
-
(2002)
IEEE APEC Conf. Rec.
-
-
Kang, X.1
Caiafa, A.2
Santi, E.3
Hudgins, J.L.4
Palmer, P.R.5
-
9
-
-
0043261030
-
Parameter extraction for a physics-based circuit simulator IGBT model
-
Miami, February
-
X. Kang, A. Caiafa, E. Santi, J. Hudgins, and P.R. Palmer. Parameter extraction for a physics-based circuit simulator IGBT model. In APEC Conf. Rec., Miami, February 2003.
-
(2003)
APEC Conf. Rec.
-
-
Kang, X.1
Caiafa, A.2
Santi, E.3
Hudgins, J.4
Palmer, P.R.5
|