A New Physics Based SPICE Model for NPT IGBTs

IECON Proceedings (Industrial Electronics Conference)

Volumn 2, Issue , 2003, Pages 1156-1161

  Chibante, Rui ^a   Araújo, Armando ^b   Carvalho, Adriano ^b  

^a INSTITUTO SUPERIOR DE ENGENHARIA DO PORTO   (Portugal)

^b UNIVERSITY OF PORTO   (Portugal)

Author keywords

Device modeling; IGBT; Power semiconductor devices; Simulation

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON MOBILITY; FINITE ELEMENT METHOD; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; SIMULATORS;

DEVICE MODELING; POWER SEMICONDUCTOR DEVICES;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 1442353549     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

1. R. Kraus and H. Mattausch. Status and Trends of Power Semiconductor Device Models for Circuit Simulation. IEEE Trans. Power Electron., 13(3): p. 452465, 1998.
2. D. Metzner, T. Vogler and D. Schröder. A Modular Concept for the Circuit Simulation of Bipolar Power Semiconductors. IEEE Trans. Power Electron., 9(5): p. 506-513, 1994.
3. A.R. Hefner. An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGST). IEEE Trans. Power Electron., 5(4): p. 459-468, 1990.
4. A.R. Hefner and D.M. Diebolt. An Experimentally Verified IGBT Model Implementation in the Saber Circuit Simulator. IEEE Trans. Power Electron., 9(5): p. 532-542, 1994.
5. G. Busatto, F. Iannuzzo and P. Grimaldi. Lumped Charge PSPICE Model for High-Voltage IGBTs. in IEEE Industry Applications Conference: IEEE 2000.
6. K. Sheng, B.W. Williams and S.J. Finney. A Review of IGBT Models. IEEE Trans. Power Electron., 15(6): p. 1250-1266, 2000.
7. H. Goebel. A Unified Method for Modeling Semiconductor Power Devices. IEEE Trans. Power Electron., 9(5): p. 497-505, 1994.
8. R. Kraus, P. Turkes and J. Sigg. Physics-Based Models of Power Semiconductor Devices for the Circuit Simulator SPICE. in 29th Annual IEEE Power Electronics Specialists Conference: IEEE 1998.
9. P. Leturcq, J. Debrie and O. Berraies. A Distributed Model of IGBTs for Circuit Simulation. in 7th European Conference on Power Electronics and Applications (EPE'97) 1997.
10. C.L. Ma, P.O. Lauritzen and J. Sigg. Modeling of Power Diodes with the Lumped-Charge Modeling Technique. IEEE Trans. Power Electron., 12(3): p. 398405, 1997.
11. A. Araújo. Modelação de Semicondutores Bipolares - Formulação de um Novo Método para Simulação em Circuitos Electrónicos de Potência, in Faculdade de Engenharia da Universidade do Porto: Porto, Portugal,1998.
12. M.O. Berraies. Modéles de Composants Semiconducteurs pour la Simulation des Circuits en Électronique de Puissance, in Université Paul Sabatier de Toulouse: Toulouse, France,1998.
13. C.M. Tan and K. Tseng. Using Power Diode Models for Circuit Simulations - A Comprehensive Review. IEEE Trans. Industrial Electron., 46(3): p. 637-645, 1999.
14. K. Sheng, S.J. Finney and B.W. Williams. A New Analytical IGBT Model with Improved Electrical Characteristics. IEEE Trans. Power Electron., 14(1): p. 98-107, 1999.
15. P.M. Igic, et al. Investigation of the Power Dissipation during IGBT Turn-off using a New Physics-Based IGBT Compact Model. Microelectronics Reliability, 42(7): p. 1045-1052, 2002.
16. P.O. Lauritzen, G.K. Andersen and M. Hespner. A Basic IGBT Model with Easy Parameter Extraction. in Power Electronics Specialists Conference (PESC). Vancouver, Canada 2001.