Effect of hydrogen partial pressure on the reliability characteristics of ultrathin gate oxide

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 11 SUPPL. B, 1998, Pages

  Park, Jihwan ^a   Huh, Yun Jun ^b   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

MOS Gate dielectric; Reliability; TDDB

Indexed keywords

CHEMICAL BONDS; CRYSTAL DEFECTS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TRAPS; HOLE TRAPS; HYDROGEN; LEAKAGE CURRENTS; MOS CAPACITORS; OXIDATION; PARTIAL PRESSURE; PRESSURE EFFECTS;

TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

GATES (TRANSISTOR);

EID: 0032203170     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l1347     Document Type: Article

References (7)

1. H. Hwang, W. Ting, D. L. Kwong and J. Lee: Appl. Phys. Lett. 57 (1990) 1010.
2. T. Ohmi, K. Nakamura and K. Makihara: IEEE IRPS 1994 (1994) 161.
3. J. Yugami, T. Itoga and M. Ohkura: IEEE IEDM 1995 (1995) 855.
4. M. Kimura and T. Ohmi: Jpn. J. Appl. Phys. 35 (1996) 1478.
5. Y. N. Cohen and T. Gorczyca: IEEE Electron Device Lett. 9 (1988) 287.
6. E. Rosenbaum and L. F. Register: IEEE Trans. Electron Device 44 (1997) 317.
7. J. Lee, I. C. Chen and C. Hu: IEEE Trans. Electron Device 35 (1988) 2268.