-
1
-
-
25844519780
-
Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer
-
Q. J. Yao and D. J. Li, “Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer,” J. Non-Cryst. Solids, vol. 351, pp. 3191–3194, 2005.
-
(2005)
J. Non-Cryst. Solids
, vol.351
, pp. 3191-3194
-
-
Yao, Q.J.1
Li, D.J.2
-
2
-
-
16244382410
-
Fully transparent ZnO thin-film transistor produced at room temperature
-
E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gonçalves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins, “Fully transparent ZnO thin-film transistor produced at room temperature,” Adv. Mater., vol. 17, pp. 590–594, 2005.
-
(2005)
Adv. Mater
, vol.17
, pp. 590-594
-
-
Fortunato, E.M.C.1
Barquinha, P.M.C.2
Pimentel, A.C.M.B.G.3
Gonçalves, A.M.F.4
Marques, A.J.S.5
Pereira, L.M.N.6
Martins, R.F.P.7
-
3
-
-
0037415828
-
ZnO-based transparent thin-film transistors
-
R. L. Hoffman, B. J. Norris, and J. F. Wager, “ZnO-based transparent thin-film transistors,” Appl. Phys. Lett., vol. 82, pp. 733–735, 2003.
-
(2003)
Appl. Phys. Lett
, vol.82
, pp. 733-735
-
-
Hoffman, R.L.1
Norris, B.J.2
Wager, J.F.3
-
4
-
-
0031271578
-
Growth of p-type zinc oxide film by chemical vapor deposition
-
K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu, “Growth of p-type zinc oxide film by chemical vapor deposition,” J. Appl. Phys., vol. 36, pt. 2, p. 1453, 1997.
-
(1997)
J. Appl. Phys
, vol.36
, Issue.2
, pp. 1453
-
-
Minegishi, K.1
Koiwai, Y.2
Kikuchi, Y.3
Yano, K.4
Kasuga, M.5
Shimizu, A.6
-
5
-
-
33846061249
-
Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method
-
H. C. Cheng, C. F. Chen, and C. Y. Tsay, “Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method,” Appl. Phys. Lett., vol. 90, p. 012113, 2007.
-
(2007)
Appl. Phys. Lett
, vol.90
, pp. 012113
-
-
Cheng, H.C.1
Chen, C.F.2
Tsay, C.Y.3
-
6
-
-
33645542322
-
High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition
-
P. F. Carcia, R. S. McLean, and M. H. Reilly, “High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition,” Appl. Phys. Lett., vol. 88, p. 123509, 2006.
-
(2006)
Appl. Phys. Lett
, vol.88
, pp. 123509
-
-
Carcia, P.F.1
McLean, R.S.2
Reilly, M.H.3
-
7
-
-
33747105549
-
High-mobility amorphous In 2O3–10 wt %ZnO thin film transistors
-
B. Yaglioglu, H. Y. Yeom, R. Beresford, and D. C. Paine, “High-mobility amorphous In 2O3–10 wt %ZnO thin film transistors,” Appl. Phys. Lett., vol. 89, p. 062103, 2006.
-
(2006)
Appl. Phys. Lett
, vol.89
, pp. 062103
-
-
Yaglioglu, B.1
Yeom, H.Y.2
Beresford, R.3
Paine, D.C.4
-
8
-
-
33744541911
-
ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators
-
J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips, “ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators,” Appl. Phys. Lett., vol. 88, no. 21, p. 212903(3), 2006.
-
(2006)
Appl. Phys. Lett
, vol.88
, Issue.21
, pp. 212903
-
-
Siddiqui, J.1
Cagin, E.2
Chen, D.3
Phillips, J.D.4
-
9
-
-
0010059052
-
Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
-
S. B. Zhang, S. H. Wei, and A. Zunger, “Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors,” Phys. Rev. B, vol. 63, p. 075205, 2001.
-
(2001)
Phys. Rev. B
, vol.63
, pp. 075205
-
-
Zhang, S.B.1
Wei, S.H.2
Zunger, A.3
-
10
-
-
79956010497
-
P-type group II-VI semiconductor compounds
-
G. Xiong, J. Wilkinson, B. Mischuck, S. Tüzemen, K. B. Ucer, and R. T. Williams, “P-type group II-VI semiconductor compounds,” Appl. Phys. Lett., vol. 80, p. 1195, 2002.
-
(2002)
Appl. Phys. Lett
, vol.80
, pp. 1195
-
-
Xiong, G.1
Wilkinson, J.2
Mischuck, B.3
Tüzemen, S.4
Ucer, K.B.5
Williams, R.T.6
-
11
-
-
0010059052
-
Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO
-
S. B. Zhang, S. H. Wei, and A. Zunger, “Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO,” Phys. Rev. B, vol. 63, p. 075205, 2001.
-
(2001)
Phys. Rev. B
, vol.63
, pp. 075205
-
-
Zhang, S.B.1
Wei, S.H.2
Zunger, A.3
-
12
-
-
10044243640
-
Mobility enhancement in ZnO-based TFTs by H treatment
-
H. S. Bae, J. H. Kim, and S. Im, “Mobility enhancement in ZnO-based TFTs by H treatment,” Electrochem. Solid-State Lett., vol. 7, no. 11, pp. G279–G281, 2004.
-
(2004)
Electrochem. Solid-State Lett
, vol.7
, Issue.11
, pp. G279-G281
-
-
Bae, H.S.1
Kim, J.H.2
Im, S.3
-
13
-
-
33744507778
-
Zinc tin oxide transistors on flexible substrates
-
W. B. Jackson, G. S. Herman, R. L. Hoffman, C. Taussig, S. Braymen, F. Jeffery, and J. Hauschildt, “Zinc tin oxide transistors on flexible substrates,” J. Non-Cryst. Solids, vol. 352, pp. 1735–1755, 2006.
-
(2006)
J. Non-Cryst. Solids
, vol.352
, pp. 1735-1755
-
-
Jackson, W.B.1
Herman, G.S.2
Hoffman, R.L.3
Taussig, C.4
Braymen, S.5
Jeffery, F.6
Hauschildt, J.7
-
14
-
-
33645547162
-
Oxide engineering of ZnO thin-film transistors for flexible electronics
-
P. F. Carcia, R. S. McLean, and M. H. Reilly, “Oxide engineering of ZnO thin-film transistors for flexible electronics,” J. SID, vol. 13/7, pp. 547–554, 2005.
-
(2005)
J. SID
, vol.13/7
, pp. 547-554
-
-
Carcia, P.F.1
McLean, R.S.2
Reilly, M.H.3
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