메뉴 건너뛰기




Volumn 5, Issue 6, 2009, Pages 192-197

Transparent ZnO Thin-Film Transistors on Glass and Plastic Substrates Using Post-Sputtering Oxygen Passivation

Author keywords

Flexible substrate; oxygen passivation; thin film transistor (TFT); ZnO

Indexed keywords


EID: 85008015637     PISSN: 1551319X     EISSN: 15589323     Source Type: Journal    
DOI: 10.1109/JDT.2008.2009321     Document Type: Article
Times cited : (23)

References (16)
  • 1
    • 25844519780 scopus 로고    scopus 로고
    • Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer
    • Q. J. Yao and D. J. Li, “Fabrication and property study of thin film transistor using rf sputtered ZnO as channel layer,” J. Non-Cryst. Solids, vol. 351, pp. 3191–3194, 2005.
    • (2005) J. Non-Cryst. Solids , vol.351 , pp. 3191-3194
    • Yao, Q.J.1    Li, D.J.2
  • 3
    • 0037415828 scopus 로고    scopus 로고
    • ZnO-based transparent thin-film transistors
    • R. L. Hoffman, B. J. Norris, and J. F. Wager, “ZnO-based transparent thin-film transistors,” Appl. Phys. Lett., vol. 82, pp. 733–735, 2003.
    • (2003) Appl. Phys. Lett , vol.82 , pp. 733-735
    • Hoffman, R.L.1    Norris, B.J.2    Wager, J.F.3
  • 4
    • 0031271578 scopus 로고    scopus 로고
    • Growth of p-type zinc oxide film by chemical vapor deposition
    • K. Minegishi, Y. Koiwai, Y. Kikuchi, K. Yano, M. Kasuga, and A. Shimizu, “Growth of p-type zinc oxide film by chemical vapor deposition,” J. Appl. Phys., vol. 36, pt. 2, p. 1453, 1997.
    • (1997) J. Appl. Phys , vol.36 , Issue.2 , pp. 1453
    • Minegishi, K.1    Koiwai, Y.2    Kikuchi, Y.3    Yano, K.4    Kasuga, M.5    Shimizu, A.6
  • 5
    • 33846061249 scopus 로고    scopus 로고
    • Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method
    • H. C. Cheng, C. F. Chen, and C. Y. Tsay, “Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method,” Appl. Phys. Lett., vol. 90, p. 012113, 2007.
    • (2007) Appl. Phys. Lett , vol.90 , pp. 012113
    • Cheng, H.C.1    Chen, C.F.2    Tsay, C.Y.3
  • 6
    • 33645542322 scopus 로고    scopus 로고
    • High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition
    • P. F. Carcia, R. S. McLean, and M. H. Reilly, “High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition,” Appl. Phys. Lett., vol. 88, p. 123509, 2006.
    • (2006) Appl. Phys. Lett , vol.88 , pp. 123509
    • Carcia, P.F.1    McLean, R.S.2    Reilly, M.H.3
  • 7
    • 33747105549 scopus 로고    scopus 로고
    • High-mobility amorphous In 2O3–10 wt %ZnO thin film transistors
    • B. Yaglioglu, H. Y. Yeom, R. Beresford, and D. C. Paine, “High-mobility amorphous In 2O3–10 wt %ZnO thin film transistors,” Appl. Phys. Lett., vol. 89, p. 062103, 2006.
    • (2006) Appl. Phys. Lett , vol.89 , pp. 062103
    • Yaglioglu, B.1    Yeom, H.Y.2    Beresford, R.3    Paine, D.C.4
  • 8
    • 33744541911 scopus 로고    scopus 로고
    • ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators
    • J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips, “ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators,” Appl. Phys. Lett., vol. 88, no. 21, p. 212903(3), 2006.
    • (2006) Appl. Phys. Lett , vol.88 , Issue.21 , pp. 212903
    • Siddiqui, J.1    Cagin, E.2    Chen, D.3    Phillips, J.D.4
  • 9
    • 0010059052 scopus 로고    scopus 로고
    • Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
    • S. B. Zhang, S. H. Wei, and A. Zunger, “Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors,” Phys. Rev. B, vol. 63, p. 075205, 2001.
    • (2001) Phys. Rev. B , vol.63 , pp. 075205
    • Zhang, S.B.1    Wei, S.H.2    Zunger, A.3
  • 11
    • 0010059052 scopus 로고    scopus 로고
    • Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO
    • S. B. Zhang, S. H. Wei, and A. Zunger, “Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO,” Phys. Rev. B, vol. 63, p. 075205, 2001.
    • (2001) Phys. Rev. B , vol.63 , pp. 075205
    • Zhang, S.B.1    Wei, S.H.2    Zunger, A.3
  • 12
    • 10044243640 scopus 로고    scopus 로고
    • Mobility enhancement in ZnO-based TFTs by H treatment
    • H. S. Bae, J. H. Kim, and S. Im, “Mobility enhancement in ZnO-based TFTs by H treatment,” Electrochem. Solid-State Lett., vol. 7, no. 11, pp. G279–G281, 2004.
    • (2004) Electrochem. Solid-State Lett , vol.7 , Issue.11 , pp. G279-G281
    • Bae, H.S.1    Kim, J.H.2    Im, S.3
  • 14
    • 33645547162 scopus 로고    scopus 로고
    • Oxide engineering of ZnO thin-film transistors for flexible electronics
    • P. F. Carcia, R. S. McLean, and M. H. Reilly, “Oxide engineering of ZnO thin-film transistors for flexible electronics,” J. SID, vol. 13/7, pp. 547–554, 2005.
    • (2005) J. SID , vol.13/7 , pp. 547-554
    • Carcia, P.F.1    McLean, R.S.2    Reilly, M.H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.