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Physical Review B

Volumn 94, Issue 9, 2016, Pages

Electronic excitation-induced semiconductor-to-metal transition in monolayer MoTe2

(3) Kolobov, A V a Fons, P a Tominaga, J a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84991052061 PISSN: 24699950 EISSN: 24699969 Source Type: Journal
DOI: 10.1103/PhysRevB.94.094114 Document Type: Article

Times cited : (55)

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