Room Temperature Semiconductor-Metal Transition of MoTe2 Thin Films Engineered by Strain

Nano Letters

Volumn 16, Issue 1, 2016, Pages 188-193

  Song, Seunghyun ^a   Keum, Dong Hoon ^a,b   Cho, Suyeon ^a   Perello, David ^a   Kim, Yunseok ^c   Lee, Young Hee ^a,b  

^a Institute for Basic Science   (South Korea)

^b Department of Energy Science ^*  (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

modulation; MoTe2; phase transition; semiconductor metal transition; Strain

Indexed keywords

MODULATION; PHASE TRANSITIONS; STRAIN; TEMPERATURE; THIN FILMS;

FIRST ORDER; LARGE VOLUMES; MOTE2; ROOM TEMPERATURE SEMICONDUCTORS; SEMICONDUCTOR-METAL TRANSITION; STRAIN MODULATION; TEMPERATURE STRESS;

TENSILE STRAIN;

EID: 84957867555     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b03481     Document Type: Article

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