Role of electronic excitation in phase-change memory materials: A brief review

Physica Status Solidi (B) Basic Research

Volumn 249, Issue 10, 2012, Pages 1861-1866

  Li, X B ^a   Liu, X Q ^b   Han, X D ^b   Zhang, S B ^a,c  

^a JILIN UNIVERSITY   (China)

^b BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^c Rensselaer Polytechnic Institute   (United States)

Author keywords

Athermal data storage; Electronic excitation; Ge Sb Te; Solid state phase transition

Indexed keywords

EXCITED STATES; MELTING; NANOCRYSTALLINE MATERIALS; OPTICAL DATA STORAGE; PHASE CHANGE MATERIALS; STORAGE (MATERIALS);

DATA STORAGE; ELECTRONIC EXCITATION; GE-SB-TE; INDUCED PHASE CHANGE; PHASE CHANGE MEMORY (PCM); PHASE CHANGE PHENOMENA; REVERSIBLE TRANSITIONS; SOLID-STATE PHASE TRANSITION;

PHASE CHANGE MEMORY;

EID: 84867221025     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201200380     Document Type: Article

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