Oxidation effect in octahedral hafnium disulfide thin film

ACS Nano

Volumn 10, Issue 1, 2016, Pages 1309-1316

  Chae, Sang Hoon ^a   Jin, Youngjo ^a,b   Kim, Tae Soo ^a   Chung, Dong Seob ^a   Na, Hyunyeong ^a   Nam, Honggi ^a,c   Kim, Hyun ^a,b   Perello, David J ^a   Jeong, Hye Yun ^a   Ly, Thuc Hue ^a   Lee, Young Hee ^a,b,c  

^a Institute for Basic Science   (South Korea)

^b Department of Energy Science ^*  (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Boron nitride; Field effect transistor; Glovebox; Hafnium disulfide; Oxidation; Vacuum cluster

Indexed keywords

BORON NITRIDE; CHARACTERIZATION; DISPLAY DEVICES; ELECTRONIC PROPERTIES; FILM PREPARATION; HAFNIUM; OPTICAL PROPERTIES; OXIDATION; SULFUR COMPOUNDS; SURFACE DEFECTS; VAN DER WAALS FORCES;

AMBIENT CONDITIONS; DEVICE FABRICATIONS; ENVIRONMENTAL SENSITIVITIES; FIELD EFFECT TRANSISTOR (FETS); GLOVEBOXES; INTRINSIC ELECTRONICS; OXYGEN-RICH ENVIRONMENT; VACUUM CLUSTER;

FIELD EFFECT TRANSISTORS;

EID: 84989821348     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b06680     Document Type: Article

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