AlInN as high-index-contrast material for GaN-based optoelectronics

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-August, Issue , 2003, Pages 36-41

  Carlin, J F ^a   Dorsaz, J ^a   Zellweger, C ^a   Gradecak, S ^a   Ilegems, M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT EMITTING DIODES; OPTICAL WAVEGUIDES; REFLECTION; SEMICONDUCTOR DIODES;

ACTIVE LAYER; HIGH INDEX CONTRAST MATERIAL; INDEX CONTRASTS; INTERNAL QUANTUM EFFICIENCY; LATTICE-MATCHED; MATERIAL QUALITY; OPTOELECTRONIC APPLICATIONS; REFERENCE DIODES;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84979304686     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCSPC.2003.1354428     Document Type: Conference Paper

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