Reliability and cell-to-cell variability of TAS-MRAM arrays under cycling conditions

2015 15th Non-Volatile Memory Technology Symposium, NVMTS 2015

Volumn 2015-January, Issue , 2016, Pages

  Grossi, Alessandro ^a   Zambelli, Cristian ^a   Olivo, Piero ^a   Alvarez Hérault, Jérémy ^b   Mackay, Ken ^b  

^a UNIVERSITY OF FERRARA   (Italy)

^b Crocus Technology   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CYTOLOGY; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; MAGNETIC RECORDING; MRAM DEVICES; NONVOLATILE STORAGE; MAGNETIC STORAGE;

CELL RESISTANCE; CELL-TO-CELL VARIABILITY; CYCLING CONDITIONS; MRAM ARRAYS; SWITCHING VOLTAGES;

CELLS;

EID: 84978162006     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMTS.2015.7457476     Document Type: Conference Paper

References (14)

1. W. Gallagher, D. Abraham, S. Assefa, S. Brown, J. De Brosse, M. Gaidis, E. Galligan, E. Gow, B. Hughes, J. Hummel, S. Kanakasabapathy, C. Kaiser, M. Lamorey, T. Maffit, K. Milkove, Y. Lu, J. Nowak, P. Rice, M. Samant, E. O'Sullivan, S. Parkin, R. Robertazzi, P. Trouilloud, D. Worledge, G. Wright, and S.-H. Yang, "Recent advances in MRAM technology," in IEEE VLSI-TSA Int. Symp., April 2005, pp. 72-73.
2. S. Senni, L. Torres, G. Sassatelli, A. Bukto, and B. Mussard, "Power efficient thermally assisted switching magnetic memory based memory systems," in Inter. Symp. on Reconfigurable and Communication-Centric Systems-on-Chip (ReCoSoC), May 2014, pp. 1-6.
3. E. Vatajelu, H. Aziza, and C. Zambelli, "Nonvolatile memories: Present and future challenges," in International Design Test Symposium (IDT), Dec 2014, pp. 61-66.
4. R. Sousa, I. Prejbeanu, D. Stanescu, B. Rodmacq, O. Redon, B. Dieny, J. Wang, and P. Freitas, "Tunneling hot spots and heating in magnetic tunnel junctions," J. of App. Phys., vol. 95, pp. 6783-6785, 2004.
5. J. Azevedo, A. Virazel, A. Bosio, L. Dilillo, P. Girard, A. Todri-Sanial, J. Alvarez-Herault, and K. Mackay, "A complete resistive-open defect analysis for thermally assisted switching MRAMs," IEEE Trans. on Very Large Scale Integration (VLSI) Systems, vol. 22, pp. 2326-2335, Nov 2014.
6. I. Prejbeanu, S. Bandiera, J. Alvarez-Hérault, R. Sousa, B. Dieny, and J. Nozìeres, "Thermally assisted MRAMs: ultimate scalability and logic functionalities," Journal of Physics D: Applied Physics, vol. 46, no. 7, p. 074002, 2013.
7. I. Prejbeanu, W. Kula, K. Ounadjela, R. Sousa, O. Redon, B. Dieny, and J.-P. Nozieres, "Thermally assisted switching in exchange-biased storage layer magnetic tunnel junctions," IEEE Trans. on Magnetics, vol. 40, pp. 2625-2627, 2004.
8. I. Prejbeanu, M. Kerekes, R. Sousa, H. Sibuet, O. Redon, B. Dieny, and J.-P. Nozieres, "Thermally assisted MRAM," J. Phys.: Condens. Matter, vol. 19, pp. 165 218-165 241, 2007.
9. S. Chaudhuri, W. Zhao, J.-O. Klein, C. Chappert, and P. Mazoyer, "Design of TAS-MRAM prototype for NV embedded memory applications," in IEEE Int. Memory Workshop (IMW), May 2010, pp. 1-4.
10. R. Ferreira, S. Cardoso, and P. Freitas, "Dynamic thermo-magnetic writing in tunnel junction cells incorporating two GeSbTe thermal barriers," in IEEE Int. Magnetics Conf., May 2006, pp. 394-394.
11. J. Azevedo, A. Virazel, A. Cheng, A. Bosio, L. Dilillo, P. Girard, A. Todri, and J. Alvarez-Herault, "Performance characterization of TASMRAM architectures in presence of capacitive defects," in Int. Conf. on Advances in System Testing and Validation Lifecycle, Oct 2013, pp. 39-44.
12. A. Grossi, C. Zambelli, P. Olivo, P. Pellati, M. Ramponi, J. Alvarez-Herault, and K. Mackay, "Automated characterization of TAS-MRAM test arrays," in IEEE Int. Conference on Design Technology of Integrated Systems in Nanoscale Era (DTIS), April 2015, pp. 1-2.
13. A. Chimenton, C. Zambelli, P. Olivo, and A. Pirovano, "Set of electrical characteristic parameters suitable for reliability analysis of multimegabit phase change memory arrays," in Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint, May 2008, pp. 49-51.
14. S. Yuasa, A. Fukushima, K. Yakushiji, T. Nozaki, M. Konoto, H. Maehara, H. Kubota, T. Taniguchi, H. Arai, H. Imamura, K. Ando, Y. Shiota, F. Bonell, Y. Suzuki, N. Shimomura, E. Kitagawa, J. Ito, S. Fujita, K. Abe, K. Nomura, H. Noguchi, and H. Yoda, "Future prospects of MRAM technologies," in IEEE Int. Electron Devices Meeting (IEDM), Dec 2013, pp. 3.1.1-3.1.4.