Design of TAS-MRAM prototype for NV embedded memory applications

2010 IEEE International Memory Workshop, IMW 2010

Volumn , Issue , 2010, Pages

  Chaudhuri, Sumanta ^a,b   Zhao, Weisheng ^a,b   Klein, Jacques Olivier ^a,b   Chappert, Claude ^a,b   Mazoyer, Pascale ^c  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED APPLICATION; EMBEDDED MEMORIES; EXPERIMENTAL PARAMETERS; GENERATION TECHNIQUES; HIGH SPEED; LOW POWER; LOW-POWER MEMORY; NEW DESIGN; PRE-CHARGE; SENSE AMPLIFIER; SPICE MODEL; STANDARD CELL;

COMPUTER SIMULATION; DESIGN; ELECTRIC BATTERIES; RANDOM ACCESS STORAGE; SOFTWARE PROTOTYPING;

MAGNETIC STORAGE;

EID: 77957916645     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2010.5488401     Document Type: Conference Paper

References (10)

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9. M Elbaraji et al., "Dynamic compact model of thermally assisted switching magnetic tunnel junctions", Journal of Applied Physics, Vol.106, 123906, 2010.
10. W.S. Zhao et al., "TAS-MRAM based Non-volatile FPGA logic circuit" Proc. Of IEEE -International Conference on Field-Programmable Technology (IEEE-ICFPT), Kitakyushu, Japan, 2007. pp.153-161