A complete resistive-open defect analysis for thermally assisted switching MRAMs

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 22, Issue 11, 2014, Pages 2326-2335

  Azevedo, Joao ^a   Virazel, Arnaud ^a   Bosio, Alberto ^a   Dilillo, Luigi ^a   Girard, Patrick ^a   Todri Sanial, Aida ^a   Alvarez Herault, Jeremy ^b   MacKay, Ken ^b  

^a LIRMM   (France)

^b Crocus Technology   (France)

Author keywords

Fault modeling; nonvolatile memories (NVM); resistive open defects; spintronics; test.; thermally assisted switching (TAS) MRAM

Indexed keywords

TESTING;

FAULT MODEL; NON-VOLATILE MEMORY; RESISTIVE-OPEN DEFECTS; THERMALLY ASSISTED SWITCHING (TAS)-MRAM;

MAGNETOELECTRONICS;

EID: 84908410528     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/TVLSI.2013.2294080     Document Type: Article

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