Ferromagnetism in exfoliated tungsten disulfide nanosheets

Nanoscale Research Letters

Volumn 8, Issue 1, 2013, Pages 1-6

  Mao, Xingze ^a   Xu, Yan ^b   Xue, Qixin ^a   Wang, Weixiao ^a   Gao, Daqiang ^a  

^a LANZHOU UNIVERSITY   (China)

^b XINXIANG UNIVERSITY   (China)

Author keywords

Ferromagnetism; Nanosheet; WS2

Indexed keywords

DIMETHYLFORMAMIDE; FERROMAGNETISM; GRAIN BOUNDARIES; GROUND STATE; NANOSHEETS; ORGANIC SOLVENTS; SATURATION MAGNETIZATION; SULFUR COMPOUNDS; TRANSITION METALS;

BULK COUNTERPART; INTRINSIC PROPERTY; LAYERED TRANSITION METAL DICHALCOGENIDES; LIQUID EXFOLIATIONS; MAGNETIC GROUND STATE; ROOM TEMPERATURE FERROMAGNETISM; TUNGSTEN DISULFIDE; ZIGZAG EDGES;

TUNGSTEN COMPOUNDS;

EID: 84887285535     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-8-430     Document Type: Article

References (30)

1. Aharon E, Albo A, Kalina M, Frey GL: Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Adv Funct Mater 2006, 16:980.
2. Lee HS, Min SW, Chang YG, Park MK, Nam T, Kim H, Kim JH, Ryu S, Im S: MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett 2012, 12:3695.
3. Seayad AM, Antonelli DM: Recent advances in hydrogen storage in metalcontaining inorganic nanostructures and related materials. Adv Mater 2004, 16:765.
4. Mosleh M, Atnafu ND, Belk JH, Nobles OM: Modification of sheet metal forming fluids with dispersed nanoparticles for improved lubrication. Wear 2009, 267:1220.
5. Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A: Single-layer MoS2 transistors. Nat Nanotech 2011, 6:147.
6. Mak KF, Lee C, Hone J, Shan J, Heinz TF: Atomically thin MoS2: a new direct-gap semiconductor. Phys Rev Lett 2010, 105:136805.
7. Matte HSSR, Gomathi A, Manna AK, Late DJ, Datta R, Pati SK, Rao CNR: MoS2 and WS2 analogues of graphene. Angew Chem Int Edit 2010, 49:4059.
8. Lauritsen JV, Kibsgaard J, Helveg S, Topsoe H, Clausen BS, Laegsgaard E, Besenbacher F: Size-dependent structure of MoS2 nanocrystals. Nat Nanotech 2007, 2:53.
9. Zhan Y, Liu Z, Najmaei S, Ajayan PM: Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 2012, 8:966.
10. Eda G, Yamaguchi H, Voiry D, Fujita T, Chen MW, Chhowalla M: Photoluminescence from chemically exfoliated MoS2. Nano Lett 2011, 11:5111.
11. Mathew S, Gopinadhan K, Chan TK, Yu XJ, Zhan D, Cao L, Rusydi A, Breese MBH, Dhar S, Shen ZX, Venkatesan T, Thong JTL: Magnetism in MoS2 induced by proton irradiation. Appl Phys Lett 2012, 101:102103.
12. Li H, Yin Z, He Q, Li H, Huang X, Lu G, Fam DWH, Tok AIY, Zhang Q, Zhang H: Fabrication of single- and multilayer MoS2 film-based field-effect transistors for sensing NO at room temperature. Small 2012, 8:63.
13. Furimsky E: Role of MoS.sub.2 and WS.sub.2 in hydrodesulfurization. Catal Rev Sci Eng 1980, 22:371.
14. Braga D, Gutiérrez Lezama I, Berger H, Morpurgo AF: Quantitative determination of the band gap of WS2 with ambipolar ionic liquidgated transistors. Nano Lett 2012, 12:5218.
15. Fang H, Chuang S, Chang TC, Takei K, Takahashi T, Javey A: Highperformance single layered WSe2 p-FETs with chemically doped contacts. Nano Lett 2012, 12:3788.
16. Zhao WJ, Ghorannevis Z, Chu LQ, Toh ML, Kloc C, Tan PH, Eda G: Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. ACS Nano 2013, 7:791.
17. Gutierrez HR, Perea-Lopez N, Elias AL, Berkdemir A, Wang B, Lv R, Lopez-Urias F, Crespi VH, Terrones H, Terrones M: Extraordinary room-temperature photoluminescence in WS2 triangular monolayers. Nano Lett 2013, 13:3447.
18. Murugan P, Kumar V, Kawazoe Y, Ota N: Atomic structures and magnetism in small MoS2 and WS2 clusters. Phys Rev A 2005, 71:063203.
19. Ma YD, Dai Y, Guo M, Niu CW, Lu JB, Huang BB: Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers. Chem Chem Phys 2011, 13:15546.
20. Ramakrishna Matte HSS, Maitra U, Kumar P, Rao BG, Pramoda K, Rao CNR, Anorg Z: Synthesis, characterization, and properties of few-layer metal dichalcogenides and their nanocomposites with noble metal particles, polyaniline, and reduced graphene oxide. Allg Chem 2012, 638:2617.
21. Coleman JN, Lotya M, O'Neill A, Bergin SD, King PJ, Khan U, Young K, Gaucher A, De S, Smith RJ, Shvets IV, Arora SK, Stanton G, Kim HY, Lee K, Kim GT, Duesberg GS, Hallam T, Boland JJ, Wang JJ, Donegan JF, Grunlan JC, Moriarty G, Shmeliov A, Nicholls RJ, Perkins JM, Grieveson EM, Theuwissen K, Mccomb DW, Nellist PD, Nicolosi V: Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science 2011, 331:568.
22. Gao DQ, Si MS, Li JY, Zhang J, Zhang ZP, Yang ZL, Xue DS: Ferromagnetism in freestanding MoS2 nanosheets. Nanoscale Res Lett 2013, 8:129.
23. Mayer JC, Chuvilin A, Algara-Siller G, Biskupek J, Kaiser U: Selective sputtering and atomic resolution imaging of atomically thin boron nitride membranes. Nano Lett 2009, 9:2683.
24. Yen PC, Huang YS, Tiong KK: The growth and characterization of rheniumdoped WS2 single crystals. J Phys Condens Matter 2004, 16:2171.
25. Rao CNR, Matte HSSR, Subrahmanyam KS, Maitra U: Unusual magnetic properties of graphene and related materials. Chem Sci 2012, 3:45.
26. Enoki T, Takai K: Unconventional electronic and magnetic functions of nanographene-based host-guest systems. Dalton Trans 2008, 8:3773.
27. Zhang J, Soon JM, Loh KP, Yin J, Ding J, Sullivian MB, Wu P: Magnetic molybdenum disulfide nanosheet films. Nano Lett 2007, 7:2370.
28. Vojvodic A, Hinnemann B, Nørskov JK: Magnetic edge states in MoS2 characterized using density-functional theory. Phys Rev B 2009, 80:125416.
29. Ataca C, Sahin H, Akturk E, Ciraci S: Mechanical and electronic properties of MoS2 nanoribbons and their defects. J Phys Chem C 2011, 115:3934.
30. Shidpoura R, Manteghian M: A density functional study of strong local magnetism creation on MoS2 nanoribbon by sulfur vacancy. Nanoscale 2010, 2:1429.