Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance

ACS Applied Materials and Interfaces

Volumn 8, Issue 20, 2016, Pages 13140-13149

  Satterthwaite, Peter F ^a   Scheuermann, Andrew G ^a   Hurley, Paul K ^b   Chidsey, Christopher E D ^c   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c STANFORD UNIVERSITY   (United States)

Author keywords

atomic layer deposition; interfacial layer; oxygen scavenging; photoelectrochemical cells; Si(100) interface; silicon dioxide; silicon photoanodes; titanium dioxide; water splitting

Indexed keywords

ANODES; ATOMIC LAYER DEPOSITION; ATOMS; CATALYSTS; DEPOSITION; ELECTRODES; METAL INSULATOR BOUNDARIES; MIS DEVICES; OXYGEN; PHOTOELECTROCHEMICAL CELLS; SCAVENGING; SEMICONDUCTING SILICON; SILICA; SILICON; SUBSTRATES; TITANIUM DIOXIDE;

INTERFACIAL LAYER; OXYGEN SCAVENGING; PHOTO-ANODES; SI(1 0 0); WATER SPLITTING;

SILICON OXIDES;

EID: 84973575849     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.6b03029     Document Type: Article

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