High dielectric constant and capacitance in ultrasmall (2.5 nm) SrHfO3 perovskite nanoparticles produced in a low temperature non-aqueous sol-gel route

RSC Advances

Volumn 6, Issue 57, 2016, Pages 51493-51502

  Karmaoui, Mohamed ^a,b   Ramana, E Venkata ^c   Tobaldi, David M ^a   Lajaunie, Luc ^d   Graça, Manuel P ^c   Arenal, Raul ^d,e   Seabra, Maria P ^a   Labrincha, João A ^a   Pullar, Robert C ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d UNIVERSITY OF ZARAGOZA   (Spain)

^e FUNDACIÓN ARAID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH-K DIELECTRIC; METALS; MOS DEVICES; NANOPARTICLES; OXIDE SEMICONDUCTORS; PEROVSKITE; RECONFIGURABLE HARDWARE; SCANNING ELECTRON MICROSCOPY; SINTERING; SOL-GEL PROCESS; STATIC RANDOM ACCESS STORAGE; TEMPERATURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

FORMATION MECHANISM; HIGH DIELECTRIC CONSTANTS; HIGH RESOLUTION SCANNING TRANSMISSION ELECTRON MICROSCOPIES; HIGH-K GATE DIELECTRIC MATERIALS; PHOTOLUMINESCENT SPECTROSCOPY; RELATIVE PERMITTIVITY; SOLVOTHERMAL CONDITIONS; X-RAY DIFFRACTION METHOD;

MOSFET DEVICES;

EID: 84971654690     PISSN: None     EISSN: 20462069     Source Type: Journal    
DOI: 10.1039/c6ra06990h     Document Type: Article

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