Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices

Nanotechnology

Volumn 27, Issue 22, 2016, Pages

  Zheng, Zhaoqiang ^a   Zhang, Tanmei ^a   Yao, Jiandomg ^a   Zhang, Yi ^a   Xu, Jiarui ^a   Yang, Guowei ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

2D materials; flexible; photodetector; transparent

Indexed keywords

OPTOELECTRONIC DEVICES; PHOTODETECTORS; PULSED LASER DEPOSITION; TRANSPARENCY; ULTRA-WIDEBAND (UWB); WEARABLE TECHNOLOGY;

DESIGN AND INTEGRATIONS; EXTERNAL QUANTUM EFFICIENCY; FLEXIBLE; MECHANICAL FLEXIBILITY; OPTOELECTRONIC SYSTEMS; PHOTORESPONSE CHARACTERISTICS; TRANSPARENT; ULTRA-BROADBAND DETECTION;

PHOTONS;

EID: 84965002976     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/27/22/225501     Document Type: Article

References (44)

1. Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N and Strano M S 2012 Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Nat. Nanotechnol. 7 699-712
2. Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A and Kis A 2013 Ultrasensitive photodetectors based on monolayer MoS2 Nat. Nanotechnol. 8 497-501
3. Kufer D, Nikitskiy I, Lasanta T, Navickaite G, Koppens F H and Konstantatos G 2015 Hybrid 2D-0D MoS2-PbS quantum dot photodetectors Adv. Mater. 27 176-80
4. Chang Y-H, Zhang W, Zhu Y, Han Y, Pu J, Chang J-K, Hsu W-T, Huang J-K, Hsu C-L and Chiu M-H 2014 Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection ACS Nano 8 8582-90
5. Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Single-layer MoS2 transistors Nat. Nanotechnol. 6 147-50
6. Takada K, Sakurai H, Takayama-Muromachi E, Izumi F, Dilanian R A and Sasaki T 2003 Superconductivity in two-dimensional CoO2 layers Nature 422 53-5
7. Lin Y C, Dumcenco D O, Huang Y S and Suenaga K 2014 Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 Nat. Nanotechnol. 9 391-6
8. Li H, Zhang Q, Yap C C R, Tay B K, Edwin T H T, Olivier A and Baillargeat D 2012 From Bulk to monolayer MoS2: evolution of Raman scattering Adv. Funct. Mater. 22 1385-90
9. Li H, Lu G, Wang Y, Yin Z, Cong C, He Q, Wang L, Ding F, Yu T and Zhang H 2013 Mechanical exfoliation and characterization of single- and few-layer nanosheets of WSe2, TaS2, and TaSe2 Small 9 1974-81
10. Yao J D, Zheng Z Q, Shao J M and Yang G W 2015 Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition Nanoscale 7 14974-81
11. Jariwala D, Sangwan V K, Lauhon L J, Marks T J and Hersam M C 2014 Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides ACS Nano 8 1102-20
12. Song X, Hu J and Zeng H 2013 Two-dimensional semiconductors: recent progress and future perspectives J. Mater. Chem. C 1 2952
13. Wang L, Jie J, Shao Z, Zhang Q, Zhang X, Wang Y, Sun Z and Lee S-T 2015 MoS2/Si heterojunction with vertically standing layered structure for ultrafast, high-detectivity, self-driven visible-near infrared photodetectors Adv. Funct. Mater. 25 2910-9
14. Jang S, Hwang E, Lee Y, Lee S and Cho J H 2015 Multifunctional graphene optoelectronic devices capable of detecting and storing photonic signals Nano Lett. 15 2542-7
15. Huo N, Kang J, Wei Z, Li S-S, Li J and Wei S-H 2014 Novel and enhanced optoelectronic performances of multilayer MoS2-WS2 heterostructure transistors Adv. Funct. Mater. 24 7025-31
16. Yao J, Shao J, Wang Y, Zhao Z and Yang G 2015 Ultra-broadband and high response of the Bi2Te3-Si heterojunction and its application as a photodetector at room temperature in Harsh working environments Nanoscale 7 12535-41
17. Liu N, Tian H, Schwartz G, Tok J B, Ren T L and Bao Z 2014 Large-area, transparent, and flexible infrared photodetector fabricated using P-N junctions formed by N-doping chemical vapor deposition grown graphene Nano Lett. 14 3702-8
18. Yin Z, Li H, Li H, Jiang L, Shi Y, Sun Y, Lu G, Zhang Q, Chen X and Zhang H 2011 Single-layer MoS2 phototransistors ACS Nano 6 74-80
19. Choi W, Cho M Y, Konar A, Lee J H, Cha G B, Hong S C, Kim S, Kim J, Jena D, Joo J and Kim S 2012 High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared Adv. Mater. 24 5832-6
20. Pradhan N R, Ludwig J, Lu Z, Rhodes D, Bishop M M, Thirunavukkuarasu K, McGill S A, Smirnov D and Balicas L 2015 High photoresponsivity and short photoresponse times in few-layered WSe2 transistors ACS Appl. Mater. Interfaces 7 12080-8
21. Huang J, Yang L, Liu D, Chen J, Fu Q, Xiong Y, Lin F and Xiang B 2015 Large-area synthesis of monolayer WSe2 on a SiO2/Si substrate and its device applications Nanoscale 7 4193-8
22. Liu Y-L, Yu C-C, Lin K-T, Yang T-C, Wang E-Y, Chen H-L, Chen L-C and Chen K-H 2015 Transparent, broadband, flexible, and bifacial-operable photodetectors containing a large-area graphene-gold oxide heterojunction ACS Nano 9 5093-103
23. Late D J, Shaikh P A, Khare R, Kashid R V, Chaudhary M, More M A and Ogale S B 2014 Pulsed laser-deposited MoS2 thin films on W and Si: field emission and photoresponse studies ACS Appl. Mater. Interfaces 6 15881-8
24. Yao J D, Shao J M and Yang G W 2015 Ultra-broadband and high-responsive photodetectors based on bismuth film at room temperature Sci. Rep. 5 12320
25. Chen Y-Z, Medina H, Su T-Y, Li J-G, Cheng K-Y, Chiu P-W and Chueh Y-L 2015 Ultrafast and low temperature synthesis of highly crystalline and patternable few-layers tungsten diselenide by laser irradiation assisted selenization process ACS Nano 9 4346-53
26. del Corro E, Terrones H, Elias A, Fantini C, Feng S, Nguyen M A, Mallouk T E, Terrones M and Pimenta M A 2014 Excited excitonic states in 1L, 2L, 3L, and bulk WSe2 observed by resonant Raman spectroscopy ACS Nano 8 9629-35
27. Huang J-K, Pu J, Hsu C-L, Chiu M-H, Juang Z-Y, Chang Y-H, Chang W-H, Iwasa Y, Takenobu T and Li L-J 2013 Large-area synthesis of highly crystalline WSe2 monolayers and device applications ACS Nano 8 923-30
28. Salitra G, Hodes G, Klein E and Tenne R 1994 Highly oriented WSe2 thin films prepared by selenization of evaporated WO3 Thin Solid Films 245 180-5
29. Cai Z-X, Li H-Y, Yang X-N and Guo X 2015 NO sensing by single crystalline WO3 nanowires Sensors Actuators B 219 346-53
30. Zheng Z Q, Zhu L F and Wang B 2015 In2O3 nanotower hydrogen gas sensors based on both schottky junction and thermoelectronic emission Nanoscale Res. Lett. 10 1002
31. Greiner M T, Helander M G, Tang W-M, Wang Z-B, Qiu J and Lu Z-H 2012 Universal energy-level alignment of molecules on metal oxides Nat. Mater. 11 76-81
32. Zhou Y, Nie Y, Liu Y, Yan K, Hong J, Jin C, Zhou Y, Yin J, Liu Z and Peng H 2014 Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets ACS Nano 8 1485-90
33. Huang S, Wu H, Zhou M, Zhao C, Yu Z, Ruan Z and Pan W 2014 A flexible and transparent ceramic nanobelt network for soft electronics NPG Asia Mater. 6 e86
34. Wang Q, Xu K, Wang Z, Wang F, Huang Y, Safdar M, Zhan X, Wang F, Cheng Z and He J 2015 Van Der Waals epitaxial ultrathin two-dimensional nonlayered semiconductor for highly efficient flexible optoelectronic devices Nano Lett. 15 1183-9
35. Chen G, Yu Y, Zheng K, Ding T, Wang W, Jiang Y and Yang Q 2015 Fabrication of ultrathin Bi2S3 nanosheets for high-performance, flexible, visible-NIR photodetectors Small 11 2848-55
36. Wang Z, Safdar M, Mirza M, Xu K, Wang Q, Huang Y, Wang F, Zhan X and He J 2015 High-performance flexible photodetectors based on GaTe nanosheets Nanoscale 7 7252-8
37. Kind H, Yan H, Messer B, Law M and Yang P 2002 Nanowire ultraviolet photodetectors and optical switches Adv. Mater. 14 158
38. Buscema M, Barkelid M, Zwiller V, van der Zant H S, Steele G A and Castellanos-Gomez A 2013 Large and tunable photothermoelectric effect in single-layer MoS2 Nano Lett. 13 358-63
39. Zheng Z Q, Yao J D, Wang B and Yang G W 2015 Light-controlling, flexible and transparent ethanol gas sensor based on ZnO nanoparticles for wearable devices Sci. Rep. 5 11070
40. Lan C, Li C, Yin Y and Liu Y 2015 Large-area synthesis of monolayer WS2 and its ambient-sensitive photo-detecting performance Nanoscale 7 5974-80
41. Island J O, Blanter S I, Buscema M, van der Zant H S and Castellanos-Gomez A 2015 Gate controlled photocurrent generation mechanisms in high-gain InSe phototransistors Nano Lett. 15 7853-8
42. Zhang W, Chiu M-H, Chen C-H, Chen W, Li L-J and Wee A T S 2014 Role of metal contacts in high-performance phototransistors based on WSe2 monolayers ACS Nano 8 8653-61
43. Hu X, Zhang X, Liang L, Bao J, Li S, Yang W and Xie Y 2014 High-performance flexible broadband photodetector based on organolead halide perovskite Adv. Funct. Mater. 24 7373-80
44. Deng K and Li L 2014 CdS nanoscale photodetectors Adv. Mater. 26 2619-235