Robust large-gap quantum spin Hall insulators in chemically decorated arsenene films

New Journal of Physics

Volumn 18, Issue 3, 2016, Pages

  Wang, Dongchao ^a,b   Chen, Li ^a,b   Shi, Changmin ^a   Wang, Xiaoli ^a   Cui, Guangliang ^a   Zhang, Pinhua ^a   Chen, Yeqing ^a  

^a LINYI UNIVERSITY   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

arsenene film; chemical decoration; first principles calculations; quantum spin Hall insulator

Indexed keywords

CALCULATIONS; QUANTUM HALL EFFECT; SUPERCONDUCTING MATERIALS; TOPOLOGY;

ELECTRONIC DEVICE; FIRST-PRINCIPLES CALCULATION; MECHANICAL DEFORMATION; QUANTUM SPIN HALL EFFECT; QUANTUM SPIN HALLS; TEMPERATURE REGIMES; TOPOLOGICAL INSULATORS; TOPOLOGICAL PROPERTIES;

SPIN HALL EFFECT;

EID: 84963642771     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/18/3/033026     Document Type: Article

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