Quantum spin hall effect in inverted type-II semiconductors

Physical Review Letters

Volumn 100, Issue 23, 2008, Pages

  Liu, Chaoxing ^a,b   Hughes, Taylor L ^b   Qi, Xiao Liang ^b   Wang, Kang ^c   Zhang, Shou Cheng ^b  

^a TSINGHUA UNIVERSITY   (China)

^b STANFORD UNIVERSITY   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; GALLIUM ALLOYS; GALVANOMAGNETIC EFFECTS; HALL EFFECT; MAGNETIC FIELD EFFECTS; PHASE TRANSITIONS; PHOTOACOUSTIC EFFECT; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WIRES; SPIN DYNAMICS; TOPOLOGY; WELLS;

AMERICAN PHYSICAL SOCIETY (APS); ASYMMETRIC STRUCTURES; GATE VOLTAGES; HGTE/CDTE; INSULATING STATE; INVERSION SYMMETRIES; QUANTITATIVE INVESTIGATION; QUANTUM MATTER; QUANTUM PHASE TRANSITION (QPT); QUANTUM SPIN HALL (QSH); QUANTUM SPIN HALL EFFECT; QUANTUM WELLS; TIME REVERSAL SYMMETRY (TRS); TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31);

SEMICONDUCTOR QUANTUM WELLS;

EID: 45249103494     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.100.236601     Document Type: Article

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