Strain-induced quantum spin hall effect in methyl-substituted germanane GeCH3

Scientific Reports

Volumn 4, Issue , 2014, Pages

  Ma, Yandong ^a   Dai, Ying ^a   Wei, Wei ^a   Huang, Baibiao ^a   Whangbo, Myung Hwan ^b  

^a SHANDONG UNIVERSITY   (China)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84923332116     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep07297     Document Type: Article

References (36)

1. Kane, C. L. & Mele, E. J. Quantum spin Hall effect in grapheme. Phys. Rev. Lett. 95, 226801 (2005).
2. 2 topological order and the quantum spin Hall effect. Phys. Rev. Lett. 95, 146802 (2005).
3. Bernevig, B. A. & Zhang, S. C. Quantum spin Hall effect. Phys. Rev. Lett. 96, 106802 (2006).
4. Bernevig, B. A., Hughes, T. L. & Zhang, S. C. Quantum spin Hall effect and topological phase transition in HgTe quantum wells. Science 314, 1757-1761 (2006).
5. Konig, M. et al. HgTe quantum wells. Science 318, 766-770 (2007).
6. Murakami, S. Quantum spin Hall effect and enhanced magnetic response by spinorbit coupling. Phys. Rev. Lett. 97, 236805 (2006).
7. Chuang, F.-C. et al. Tunable topological electronic structures in Sb (111) bilayers: A first-principles study. Appl. Phys. Lett. 102, 022424 (2013).
8. Yao, Y. G., Ye, F., Qi, X. L., Zhang, S. C. & Fang, Z. Spin-orbit gap of graphene: First-principles calculations. Phys. Rev. B 75, 041401 (2007).
9. Huertas-Hernando, D., Guinea, F. & Brataas, A. Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps. Phys. Rev. B 74, 155426 (2006).
10. Liu, C., Hughes, T. L., Qi, X. L., Wang, K. & Zhang, S. C. Quantum spin Hall effect in inverted type-II semiconductors. Phys. Rev. Lett. 100, 236601 (2008).
11. Knez, I., Du, R. & Sullivan, G. Evidence for helical edge modes in inverted InAs/GaSb quantum wells. Phys. Rev. Lett. 107, 136603 (2011).
12. Liu, C.-C., Feng, W. & Yao, Y. Quantum spin Hall effect in silicene and two-dimensional germanium. Phys. Rev. Lett. 107, 076802 (2011).
13. Novoselov, K. et al. A roadmap for grapheme. Nature 490, 192-220 (2012).
14. Liu, C.-C., Jiang, H. & Yao, Y. Low-energy effective Hamiltonian involving spinorbit coupling in silicene and two-dimensional germanium and tin. Phys. Rev. B 84, 195430 (2011).
15. Xu, Y. et al. Large-gap quantum spin hall insulators in tin film. Phys. Rev. Lett. 111, 136804 (2013).
16. Bianco, E. et al. Stability and exfoliation of germanane: A germanium graphane analogue. ACS Nano 7, 4414-4421 (2013).
17. Koski, K. J. & Cui, Y. The new skinny in two-dimensional nanomaterials. ACS Nano 7, 3739-3743 (2013).
18. Si, C. et al. Functionalized germanene as a prototype of large-gap two-dimensional topological insulators. Phys. Rev. B 89, 115429 (2014).
19. Jiang, S. S. et al. Improving the stability and optical properties of germanane via one-step covalent methyl-termination. Nat. Commun. 5, 3389 (2014).
20. Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010).
21. Zhao, L., Liu, J. W., Tang, P. Z. & Duan, W. H. Design of strain-engineered quantum tunneling devices for topological surface states. Appl. Phys. Lett. 100, 131602 (2012).
22. Ma, Y. D., Dai, Y., Yu, L., Niu, C. W. & Huang, B. B. Engineering a topological phase transition inb-InSe via strain. New J. Phys. 15, 073008 (2013).
23. Feng, W. X. et al. Strain tuning of topological band order in cubic semiconductors. Phys. Rev. B 85, 195114 (2012).
24. Ma, Y. D., Dai, Y., Niu, C. W. & Huang, B. B. Halogenated two-dimensional germanium: candidate materials for being of Quantum Spin Hall state. J. Mater. Chem. 22, 12587-12591 (2012).
25. Ma, Y. D., Dai, Y., Guo, M., Niu, C. W. & Huang, B. B. Intriguing behavior of halogenated two-dimensional tin. J. Phys. Chem. C 116, 12977-12981 (2012).
26. Fu, L. & Kane, C. L. Topological insulators with inversion symmetry. Phys. Rev. B 76, 045302 (2007).
27. 5: A paradigm for large-gap quantum spin Hall insulators. Phys. Rev. X 4, 011002 (2014).
28. Heyd, J., Scuseria, G. & Ernzerhof, M. Heyd-Scuseria-Ernzerhof hybrid functional for calculating the lattice dynamics of semiconductors. J. Chem. Phys. 118, 8207 (2003).
29. Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 50, 17953.
30. Kresse, G. & Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 59, 1758 (1999).
31. Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15-50 (1996).
32. Kresse, G. & Furthmüller, J. Efficient iterative schemes for ab initio totalenergy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169-11186 (1996).
33. Ceperley, D. M. & Alder, B. J. Ground state of the electron gas by a stochastic method. Phys. Rev. Lett. 45, 566-569 (1980).
34. Monkhorst, H. J. & Pack, J. D. Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188-5192 (1976).
35. Clark, S. J. et al. First principles methods using CASTEP. Z. Kristallogr. 220, 567-570 (2005).
36. Refson, K., Tulip, P. R. & Clark, S. J. Variational density-functional perturbation theory for dielectrics and lattice dynamics. Phys. Rev. B 73, 155114 (2006).