Robust helical edge transport in gated InAs/GaSb bilayers

Physical Review Letters

Volumn 114, Issue 9, 2015, Pages

  Du, Lingjie ^a   Knez, Ivan ^a,b   Sullivan, Gerard ^c   Du, Rui Rui ^a  

^a RICE UNIVERSITY   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TEMPERATURE DISTRIBUTION;

EDGE TRANSPORT; ELECTRON-HOLE BILAYERS; EXOTIC PROPERTIES; IN-PLANE FIELDS; MESOSCOPICS; SILICON IMPURITY; TEMPERATURE DEPENDENCE; WIDE TEMPERATURE RANGES;

INDIUM ANTIMONIDES;

EID: 84924352849     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.114.096802     Document Type: Article

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