Investigation of aluminum film properties and microstructure for replacement metal gate application

Microelectronic Engineering

Volumn 106, Issue , 2013, Pages 56-62

  Huang, R P ^a   Tsai, T C ^a   Lin, Welch ^a   Huang, H F ^a   Tsai, M C ^a   Hsu, H K ^a   Hsu, C M ^a   Lin, J F ^a   Yang, C L ^a   Wu, J Y ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Chemical mechanical polishing; High k metal gate; Physical vapor deposition; Pinhole; Reflectivity; Replacement metal gate; Resistivity; Wetting layer; Work function metal

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; CRYSTAL ORIENTATION; DEPOSITION; ELECTRIC CONDUCTIVITY; METALS; PHYSICAL VAPOR DEPOSITION; POLISHING; RECONFIGURABLE HARDWARE; REFLECTION; VAPOR DEPOSITION; WETTING;

ALUMINUM (AL); FILM PROPERTIES; HIGH-K METAL GATES; METAL DEPOSITION; METAL GATE; PINHOLE; PROCESS REQUIREMENTS; WETTING LAYER;

ALUMINUM;

EID: 84962739382     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.02.016     Document Type: Conference Paper

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