Process development of high-k metal gate aluminum CMP at 28 nm technology node

Microelectronic Engineering

Volumn 92, Issue , 2012, Pages 19-23

  Hsien, Y H ^a   Hsu, H K ^a   Tsai, T C ^a   Lin, Welch ^a   Huang, R P ^a   Chen, C H ^a   Yang, C L ^a   Wu, J Y ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Al CMP; Defect improve; HKMG; Metal gate height loss; RMG; RTPC

Indexed keywords

AL-CMP; AL-METAL; ALUMINUM METAL; CHEMICAL-MECHANICAL POLISHING PROCESS; DEFECTIVITY; DETECTING SYSTEMS; DOWN FORCE; DUMMY STRUCTURES; END POINTS; HKMG; METAL GATE; MICROSCRATCHES; PATTERN DENSITY; PERFORMANCE CONTROL; POLISHING STEPS; PROCESS DEVELOPMENT; PROFILE CONTROL; RMG; RTPC; TECHNOLOGY NODES;

CHEMICAL MECHANICAL POLISHING; METALS; NANOTECHNOLOGY; POLISHING;

ALUMINUM;

EID: 84858295001     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.04.013     Document Type: Conference Paper

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