Comparison of plasma doping and beamline technologies for low energy ion implantation

Proceedings of the International Conference on Ion Implantation Technology

Volumn 22-27-September-2002, Issue , 2002, Pages 151-156

  Renau, A ^a   Scheuer, J T ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

Control systems; Counting circuits; Doping; Implants; Ion implantation; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma sources; Productivity

Indexed keywords

CONTROL SYSTEMS; COUNTING CIRCUITS; DENTAL PROSTHESES; DOPING (ADDITIVES); IONS; PLASMA APPLICATIONS; PLASMA DEVICES; PLASMA SOURCES; PRODUCTIVITY; SEMICONDUCTOR DOPING;

BEAMLINE IMPLANTS; DEVICE PERFORMANCE; IMPLANT ANGLE CONTROL; LOW ENERGY ION IMPLANTATION; PLASMA DOPING; PLASMA DOPING TECHNOLOGIES; PLASMA IMMERSION ION IMPLANTATION; SOURCE-DRAIN EXTENSIONS;

ION IMPLANTATION;

EID: 84961379697     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1257961     Document Type: Conference Paper

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