Contamination control in a pulsed plasma doping tool

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 500-503

  Walther, Steve ^a   Liebert, Reuel B ^a   Felch, Susan ^a   Fang, Ziwei ^a   Woong Koo, Bon ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC IMPLANTATION; CONTAMINATION CONTROL; DEPTH PROFILE; DOPING SYSTEM; LOW ENERGY IMPLANTATION; MASS SELECTION; PARTICULATE CONTAMINATION; PLASMA DOPING; PRELIMINARY DATA; PULSED PLASMA DOPING; SECONDARY ION MASS SPECTROSCOPY; SPUTTERED MATERIALS; SUB-KEV; SURFACE CONTAMINATIONS;

ARSENIC; BORON; BORON COMPOUNDS; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

CONTAMINATION;

EID: 78649847449     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924197     Document Type: Conference Paper

References (5)

1. Reuel B. Liebert, Steve Walther, Susan Felch, Ziwei Fang, Bjorn Pedersen, and David Hacker, "Plasma Doping System for 300 mm Wafers", these proceedings.
2. th Int. Conf. Ion Implant. Tech., Guildford, UK, July 30 - Aug. 3, 1990.
3. P. K. Chu, S. B. Felch, P. Kellerman, F. Sinclair, L. A. Larson, and B. Mizuno, "Plasma doping: Progress and potential," Solid State Technol., 55-60 (Sept. 1999) and 77-82 (Oct. 1999).
4. Steve Walther, Damien Lenoble, Ziwei Fang, and Reuel B. Liebert, "Implant Dosimetry System for Plasma Doping", these proceedings.
5. th Int. Conf. Ion Implant. Tech., Kyoto, Japan, June 22-26, 1998.