Plasma doping system for 200 and 300mm wafers

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 2000, Pages 472-475

  Liebert, Reuel B ^a   Walther, Steven R ^a   Felch, Susan B ^a   Fang, Ziwei ^a   Pedersen, Bjorn O ^a   Hacker, David ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

300 MM WAFERS; ANODE CATHODES; CATHODIC PULSE; CLUSTER TOOL; CONTAMINATION CONTROL; DISPLACEMENT CURRENTS; DOSE CONTROL; END STATIONS; FIRST ORDER; INTEGRATION PROCESS; MASS FLOW CONTROLLER; N-TYPE DOPANTS; NOVEL METHODS; OPERATIONAL PERFORMANCE; PLASMA DOPING; PLASMA FORMATIONS; PLASMA IGNITION; PLASMA PROCESSING; PRESSURE REGULATION SYSTEMS; PROCESS CHAMBERS; PROCESS PRESSURE; PULSE CHARGE; WAFER HANDLING SYSTEMS;

CLUSTER COMPUTING; ION IMPLANTATION; PLASMA DEVICES; PLASMAS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

PROCESS CONTROL;

EID: 78649837847     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924190     Document Type: Conference Paper

References (8)

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5. D. Lenoble, M. Goeckner, S. Felch, Z. Fang, J. Galvier, A. Grouillet, "Evaluation of plasma doping for sub-0.18 pn devices", in Ion Implantation Technology - 98, J. Matsuo, G. Takaoka, I. Yamada, Eds. IEEE, 1999, pp. 1222- 1225
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7. S. Walther, D. Lenoble, Z. Fang, R. Liebert, "Implant Dosimetry System for Plasma Doping".in Ion Impluntation Technology - 2000, in press
8. D. Lenoble, A. Grouillet, F. Amaud, M. Haond, S. Felch, Z. Fang, S. Walther, and R. Liebert, "Direct comparison of electrical performance of 0.1μm pMO SFETs doped by plasma doping or low energy ion implantation," in Ion Implantation Technology - 2000, in press