|
Volumn , Issue , 2000, Pages 627-630
|
Charge exchange cross sections relevant to ion implantation for ultra shallow junctions
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ASYMMETRIC CROSS SECTION;
BACKGROUND GAS;
BEAM IONS;
BEAM LINES;
BEAM TRANSPORT;
CHARGE EXCHANGE PROCESS;
CHARGE EXCHANGES;
CHARGE-EXCHANGE CROSS SECTIONS;
CROSS SECTION;
ENERGY DEPENDENCE;
ENERGY RANGES;
GROWTH CURVES;
ION ENERGIES;
ION IMPLANTERS;
LOW ENERGIES;
MASS ANALYSIS;
MEASUREMENT PROCEDURES;
OPTIMUM CONDITIONS;
ULTRA LOW ENERGY;
ULTRA SHALLOW JUNCTION;
ARGON;
CHARGE TRANSFER;
ION IMPLANTATION;
PLASMAS;
XENON;
ION EXCHANGE;
|
EID: 78649884745
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/.2000.924231 Document Type: Conference Paper |
Times cited : (5)
|
References (4)
|